Anne S. Verhulst

IMEC — Belgium

Engineering · Physical Sciences

35h-index4.3kcitations179works1.12yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(133), Semiconductor materials and devices(126), Nanowire Synthesis and Applications(45), Ferroelectric and Negative Capacitance Devices(30), Integrated Circuits and Semiconductor Failure Analysis(23)

Publications179 total

Performance Improvement in Sub-2nm Node Nanosheet-FETs Through Optimization of Spacer Interface and Dopant Activation
2025Open Access
Editorial for the J-EDS Special Issue for ESSERC 2024
IEEE Journal of the Electron Devices Society·2025Open Access
2024 IEEE European Solid-State Electronics Research Conference [Conference Reports]
IEEE Solid-State Circuits Magazine·2025
Nanopore Field-Effect Transistors for Single-Protein Detection: Design and Operation Optimization via Compact Modeling
IEEE Sensors Journal·2024
Detectability limits of single proteins with nanopore-based voltage and ionic-current sensing
2024· 1 cited
The nanopore-FET: a nanofluidic-nanoelectronic silicon-based device for enabling proteomics
2024
Design Principles of DNA-Barcodes for Nanopore-FET Readout, Based on Molecular Dynamics and TCAD Simulations
The Journal of Physical Chemistry A·2024· 6 cited
(Invited) BioFETs and Nanopore FETs: Nanoscale Silicon Field-Effect Transistors for Single-Molecule Sensing
ECS Meeting Abstracts·2023
(Invited) BioFETs and Nanopore FETs: Nanoscale Silicon Field-Effect Transistors for Single-Molecule Sensing
ECS Transactions·2023· 1 cited
The Nanopore-FET as a High-Throughput Barcode Molecule Reader for Single-Molecule Omics and Read-out of DNA Digital Data Storage
2022 International Electron Devices Meeting (IEDM)·2022· 8 citedOpen Access
Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification
IEEE Transactions on Electron Devices·2022· 10 cited
Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules
IEEE Sensors Journal·2022· 11 citedOpen Access
Plenary Session
2021 IEEE International Electron Devices Meeting (IEDM)·2021Open Access
Foreword Special Issue on “New Simulation Methodologies for Next-Generation TCAD Tools”
IEEE Transactions on Electron Devices·2021Open Access
Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
Communications Physics·2021· 4 citedOpen Access
Investigation of Imprint in FE-HfO₂ and Its Recovery
IEEE Transactions on Electron Devices·2020· 43 citedOpen Access
Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET
IEEE Transactions on Electron Devices·2020· 10 citedOpen Access
Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
IEEE Transactions on Electron Devices·2020· 1 citedOpen Access
Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
IEEE Transactions on Electron Devices·2019· 28 citedOpen Access
Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping
2019· 20 cited
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Frequent Co-authors

G. Groeseneken(29), Nadine Collaert(19), Bart Sorée(17), William G. Vandenberghe(16), A. Vandooren(16), R. Rooyackers(16), Marc Heyns(13), Aaron Thean(13), Devin Verreck(11), Kuo-Hsing Kao(9), Daniele Leonelli(9), Wim Magnus(9), K. De Meyer(8), Quentin Smets(7), A. Walke(6), Roger Loo(6), Eddy Simoen(6), Andriy Hikavyy(5), A. Alian(5), Wilfried Vandervorst(5)