Hitoshi Takane

Materials Science · Physical Sciences

11h-index286citations29works6.42yr avg
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Research Topics

Ga2O3 and related materials(22), ZnO doping and properties(18), Advanced Photocatalysis Techniques(11), Semiconductor materials and devices(7), Gas Sensing Nanomaterials and Sensors(3)

Publications29 total

Mist-chemical vapor deposition grown Ge-doped α-Ga<sub>2</sub>O<sub>3</sub> thin films with high mobilities
AIP Publishing·2026Open Access
Supplemental Material
AIP Publishing·2026Open Access
Supplemental Material
AIP Publishing·2026Open Access
Electronic and structural properties of rutile-type Ge0.58Sn0.42O2/SnO2 heterostructure grown on TiO2 substrate
APL Materials·2025· 3 citedOpen Access
Amorphous-germania as an annealing-resistive and water-soluble sacrifice layer for fabricating metasurface stickers
Japanese Journal of Applied Physics·2025· 5 cited
24-mA/mm metal–semiconductor field-effect transistor based on Ge-doped α-Ga2O3 grown by mist chemical vapor deposition
Applied Physics Letters·2024· 4 cited
Transmission electron microscopic study on rutile-type GeO2 film on TiO2 (001) substrate
Applied Physics Letters·2024· 13 cited
Structural characterization of threading dislocation in α-Ga2O3 thin films on <i>c</i>- and <i>m</i>-plane sapphire substrates
Journal of Applied Physics·2024· 14 citedOpen Access
Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes
Journal of Applied Physics·2024· 19 citedOpen Access
Carrier density control of Sb-doped rutile-type SnO<sub>2</sub> thin films and fabrication of a vertical Schottky barrier diode
Applied Physics Express·2024· 3 citedOpen Access
Phase-Selective Synthesis of Oxide Materials via Mist Chemical Vapor Deposition
Topics in applied physics·2024
Rutile-type Ge<sub> x </sub>Sn<sub>1−x </sub>O<sub>2</sub> alloy layers lattice-matched to TiO<sub>2</sub> substrates for device applications
Applied Physics Express·2024· 16 citedOpen Access
Schottky Barrier Diode Based on Ge-Doped $\alpha-\text{Ga}_{2}\mathrm{O}_{3}$ Films Grown by Mist-CVD Method
2023· 3 cited
Low-temperature electron transport of rutile-type Ge<i>x</i>Sn1−<i>x</i>O2
Journal of Applied Physics·2023· 12 cited
Prospects of mist CVD for fabrication of β-Ga<sub>2</sub>O<sub>3</sub> MESFETs on β-Ga<sub>2</sub>O<sub>3</sub> (010) substrates
Applied Physics Express·2023· 15 citedOpen Access
Effect of dislocations and impurities on carrier transport in α-Ga2O3 on m-plane sapphire substrate
Journal of materials research/Pratt's guide to venture capital sources·2023· 19 cited
Influence of HCl concentration in source solution and growth temperature on formation of <i>α</i>-Ga<sub>2</sub>O<sub>3</sub> film via mist-CVD process
Japanese Journal of Applied Physics·2023· 7 citedOpen Access
Growth dynamics of selective-area-grown rutile-type SnO<sub>2</sub> on TiO<sub>2</sub> (110) substrate
Applied Physics Express·2023· 4 citedOpen Access
Development of a novel rutile-type SnO2-GeO2-SiO2 alloy system
2023
Growth of Ga<sub>2</sub>O<sub>3</sub> film on ScAlMgO<sub>4</sub> substrate by mist-chemical vapor deposition
Japanese Journal of Applied Physics·2023· 3 citedOpen Access
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Frequent Co-authors

Kentaro Kaneko(24), Katsuhisa Tanaka(17), Takeru Wakamatsu(16), Yuki Isobe(8), Shizυo Fujita(6), Yuichi Ota(5), Tsutomu Araki(4), H. Izumi(3), Shinya Konishi(3), Yuichiro Hayasaka(3), Takashi Shinohe(3), Hirokazu Izumi(3), Katsuhisa Tanaka(3), Yuki Isobe(3), Kentaro Kaneko(3), Takayoshi Oshima(2), Ryo Ota(2), Y. Takahashi(2), Hajime Hojo(1), T. Harada(1)