W. Y. Cheung

Chinese University of Hong Kong — China

Engineering · Physical Sciences

11h-index372citations22works0.02yr avg
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Research Topics

Semiconductor materials and devices(4), Diamond and Carbon-based Materials Research(4), Thin-Film Transistor Technologies(4), Silicon and Solar Cell Technologies(4), Silicon Nanostructures and Photoluminescence(4)

Publications22 total

Spherically shaped active transducer based on proton-irradiated vinylidene fluoride-trifluoroethylene 70∕30mol% copolymer
Review of Scientific Instruments·2006Open Access
Helium implanted silicon waveguide photodetectors for optical power monitors
2006· 1 cited
Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
Materials Science and Engineering B·2005· 4 cited
Enhanced infrared responsivity of helium implanted SOI waveguides
2005
Processing and Characterization of Micromachined Actuators Based on Proton-Irradiated P(VDF-TrFE) Copolymer
Integrated ferroelectrics·2005· 7 cited
Effect of Ag on the structure and magnetic properties of CoPt/Ag nanocomposite films
Acta Physica Sinica·2005Open Access
Sample refinement and manipulation of silicon nanowires
Materials Characterization·2002· 3 cited
Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing
Journal of Applied Physics·2001· 32 citedOpen Access
Comparison between the different implantation orders in H<sup>+</sup>and He<sup>+</sup>coimplantation
Journal of Physics D Applied Physics·2001· 15 citedOpen Access
Pulsed filtered vacuum arc deposition of ta-C films (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
映像情報メディア学会技術報告·2000
Pulsed Filtered Vacuum Arc Deposition of ta-C Films
電子情報通信学会技術研究報告. MR, 磁気記録·2000
Effects of ion beam bombardment on electrochromic tungsten oxide films studied by X-ray photoelectron spectroscopy and Rutherford back-scattering
Thin Solid Films·2000· 70 cited
Low temperature doping of poly-SiGe films with boron by co-sputtering
Thin Solid Films·2000· 23 cited
Silicon Field Emitter Array by Fast Anodization Method
MRS Proceedings·2000· 1 cited
Field emission characteristics of SiC capped Si tip array by ion beam synthesis
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1999· 13 cited
Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition
Applied Physics Letters·1999· 19 cited
Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method
Applied Physics Letters·1999· 66 cited
Ion beam induced crystallization effect and growth kinetics of buried SiC layers formed by carbon implantation into silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1999· 26 cited
Atomic force microscopy study of microcrystalline SiC fabricated by ion beam synthesis
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1998· 5 cited
Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source
Applied Physics Letters·1998· 27 cited
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Frequent Co-authors

S. P. Wong(9), Jianbin Xu(7), I. H. Wilson(5), R. W. M. Kwok(4), S.P. Wong(4), S. P. Wong(4), Dihu Chen(3), Nguyen Huu Ke(3), N. Ke(3), Guangda Hu(2), Emil V. Jelenković(2), Raymond Kai‐Yu Tong(2), Xinzhong Duo(2), Weili Liu(2), Lianwei Wang(2), Lin Chenglu(2), Masanori Okuyama(2), Masaharu Noda(2), Paul K. Chu(2), Peigang Hu(2)