C. M. Gronet

Engineering · Physical Sciences

17h-index1.1kcitations35works0.02yr avg
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Research Topics

Semiconductor materials and devices(16), Semiconductor materials and interfaces(13), Advancements in Semiconductor Devices and Circuit Design(9), Silicon and Solar Cell Technologies(8), Thin-Film Transistor Technologies(6)

Publications35 total

Semiconductor Electrodes LXI. Photoelectrochemistry of n-ZrS2 in Aqueous Solutions
2009
Polymer Films on Electrodes. XVI. In Situ Ellipsometric Measurements of Polybipyrazine, Polyaniline, and Polyvinylferrocene Films
2009
Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing
2003· 13 cited
Driving 100 nm and below 300 mm manufacturing solutions - an era of single wafer processing, factory efficiencies, and new materials and technology introductions at reduced thermal budget and improved cycle time
2002
Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications
Thin Solid Films·1990· 57 cited
Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
IEEE Electron Device Letters·1989· 66 cited
Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processing
IEEE Electron Device Letters·1989· 37 cited
Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
IEEE Electron Device Letters·1989· 171 cited
Limited Reaction Processing: Growth of Si-Ge/Si for Heterojunction Bipolar Transistor Applications
1989
Epitaxial Growth of Si<i><sub>l-x</sub></i>Ge<sub>x</sub>/Si Heterostructures by Limited Reaction Processing for Minority Carrier Device Applications
MRS Proceedings·1989· 11 cited
Electrical characterization of in-situ epitaxially grown Si p-n junctions fabricated using limited reaction processing
IEEE Electron Device Letters·1988· 18 cited
Limited reaction processing; Flexible thermal budgeting
AIP conference proceedings·1988
Characterization of p-N Si/sub 1-x/Ge/sub x//Si heterojunctions grown by limited reaction processing
IEEE Transactions on Electron Devices·1988· 13 cited
Onset of Misfit Dislocation Generation in As-Grown and Annealed Si<sub>l-X</sub>Ge<sub>x</sub>/Si Films
MRS Proceedings·1988· 6 cited
Secondary ion mass spectrometry of hyper-abrupt doping transitions fabricated by limited reaction processing
Applied Physics Letters·1987· 15 cited
Growth of GeSi/Si strained-layer superlattices using limited reaction processing
Journal of Applied Physics·1987· 62 citedOpen Access
Limited Reaction Processing: Silicon and III–V Materials
MRS Proceedings·1987· 6 cited
IIIB-3 Limited reaction processing: In-situ epitaxial silicon thin-oxide polysilicon layers for MOS transistors
IEEE Transactions on Electron Devices·1986· 1 cited
In-situ epitaxial silicon—oxide-doped polysilicon structures for MOS field-effect transistors
IEEE Electron Device Letters·1986· 21 cited
Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processing
Journal of Applied Physics·1986· 27 cited
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Frequent Co-authors

J. F. Gibbons(26), C. A. King(15), Nathan S. Lewis(11), Judy L. Hoyt(9), M. P. Scott(9), T. I. Kamins(7), S. S. Laderman(7), George W. Cogan(6), D. B. Noble(6), S. Wilson(6), J. Turner(5), K. Nauka(5), Katherine Williams(4), S. J. Rosner(4), J. C. Sturm(4), Gillian Reid(4), W. G. Opyd(3), R. Hull(3), S. Reynolds(3), D. Vook(3)