F. Gomez-Marlasca

Comisión Nacional de Energía Atómica — Argentina

Engineering · Physical Sciences

13h-index547citations33works5.02yr avg
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Research Topics

Advanced Memory and Neural Computing(23), Ferroelectric and Negative Capacitance Devices(14), Electronic and Structural Properties of Oxides(7), Neuroscience and Neural Engineering(6), Spacecraft Design and Technology(6)

Publications33 total

Characterization of SiPM performance in a small satellite in low earth orbit using LabOSat-01
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment·2024· 3 citedOpen Access
Total ionizing dose measurements in small satellites in LEO using LabOSat-01
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment·2024· 7 citedOpen Access
Study of Silicon Photomultipliers in Low Earth Orbit
2023· 3 cited
LabOSat-01: A Payload for In-Orbit Device Characterization
IEEE Embedded Systems Letters·2023· 7 cited
Proton irradiation effects on metal-YBCO interfaces
Radiation Physics and Chemistry·2021· 6 citedOpen Access
Silicon photomultiplier characterization on board a satellite in Low Earth Orbit
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment·2020· 9 citedOpen Access
LabOSat as a versatile payload for small satellites: first 100days in LEO orbit
arXiv (Cornell University)·2020· 1 citedOpen Access
COTS MOS Dosimetry on the MeMOSat Board, Results After 2.5 Years in Orbit
arXiv (Cornell University)·2020· 2 citedOpen Access
Studying ReRAM devices at Low Earth Orbits using the LabOSat platform
Radiation Physics and Chemistry·2018· 11 cited
Caracterización de propiedades eléctricas de muestras cerámicas de La0.325Pr0.300Ca0.375MnO3 para su uso como dispositivos con memoria no volátil
Repositorio Digital Institucional de la Universidad de Buenos Aires (Universidad de Buenos Aires)·2017Open Access
LabOSat: Low cost measurement platform designed for hazardous environments
2016· 4 cited
Manganite-based three level memristive devices with self-healing capability
Physics Letters A·2016· 18 citedOpen Access
Manganite-based three level memristive devices with self-healing capability
arXiv (Cornell University)·2016Open Access
Modeling of the major and minor I-V loops in La0.3Ca<sub>0.7</sub>MnO<sub>3</sub>films using asymmetric logistic hysterons
2015· 1 cited
Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness
Thin Solid Films·2015· 17 citedOpen Access
HfO2 based memory devices with rectifying capabilities
Journal of Applied Physics·2014· 14 citedOpen Access
Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit
IEEE Transactions on Circuits & Systems II Express Briefs·2014· 19 cited
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
arXiv (Cornell University)·2013Open Access
Two resistive switching regimes in thin film manganite memory devices on silicon
Applied Physics Letters·2013· 43 citedOpen Access
Modeling electronic transport mechanisms in metal-manganite memristive interfaces
Journal of Applied Physics·2013· 13 citedOpen Access
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Frequent Co-authors

P. Lévy(22), F. Golmar(14), M. J. Rozenberg(12), D. Rubi(11), N. Ghenzi(11), Mariano Barella(10), G. A. Sanca(10), M. J. Sánchez(8), Pablo Stoliar(8), Pablo Levy(6), C. Acha(4), A. G. Leyva(4), Cecilia Albornoz(4), W. Román Acevedo(4), Lucas Finazzi(4), Ruben Weht(3), Jérôme Lecourt(3), Ulrike Lüders(3), Pablo Granell(3), Federico Izraelevitch(3)