S. A. Teys

Institute of Semiconductor Physics — Russia

Physics and Astronomy · Physical Sciences

14h-index842citations76works0.02yr avg
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Research Topics

Surface and Thin Film Phenomena(36), Semiconductor materials and interfaces(35), Semiconductor Quantum Structures and Devices(30), Silicon Nanostructures and Photoluminescence(25), Photonic and Optical Devices(12)

Publications76 total

Size Distribution of Straight Step Region on the Si(100) Surface
2023
STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)N and (8 × 8) Structures in the SiN/Si(111) System
Crystals·2022· 11 citedOpen Access
Equilibrium Concentration of Kinks on the SB Steps of the Si(100) Surface
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2022· 4 cited
Evolution of the atomic and electronic structures during nitridation of the Si(1 1 1) surface under ammonia flux
Applied Surface Science·2021· 11 cited
Misfit Stresses in Epitaxial Germanium Nanofilms on Substrates of Si(111) with Low-Density Surface Phases
Bulletin of the Russian Academy of Sciences Physics·2020· 1 cited
Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge
Scientific Reports·2020· 14 citedOpen Access
An Unusual Mechanism of Misfit Stress Relaxation in Thin Nanofilms
Technical Physics Letters·2019· 2 cited
Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride
2D Materials·2019· 13 citedOpen Access
Formation of a Graphene-Like SiN Layer on the Surface Si(111)
Semiconductors·2018· 7 cited
MULTILAYERED PERIODICAL STRUCTURES WITH ELASTICALLY STRAINED GESISN LAYERS AND GESISN NANOISLANDS
Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering·2018Open Access
Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain‐Patterned Substrates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2017· 7 cited
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
Modern Electronic Materials·2017Open Access
Different STM images of the superstructure on a clean Si(133)-6 × 2 surface
Journal of Experimental and Theoretical Physics Letters·2017· 5 cited
Pentagons in the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Si</mml:mi><mml:mo>(</mml:mo><mml:mn>331</mml:mn><mml:mo>)</mml:mo><mml:mo>−</mml:mo><mml:mo>(</mml:mo><mml:mn>12</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math>surface reconstruction
Physical review. B./Physical review. B·2017· 13 citedOpen Access
Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism
Elsevier eBooks·2016· 2 cited
Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study
Applied Surface Science·2016· 23 cited
Types of surface modulation in a Ge–Si(111) heterosystem
Bulletin of the Russian Academy of Sciences Physics·2016· 4 cited
Peculiarities of CdS nanocrystal formation at annealing of a Langmuir‐Blodgett matrix
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2016· 3 cited
Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy
Semiconductors·2015· 3 cited
Nucleation and growth of ordered groups of SiGe quantum dots
Semiconductors·2015· 8 cited
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Frequent Co-authors

B.Z. Olshanetsky(16), R. A. Zhachuk(9), А. В. Двуреченский(7), O. P. Pchelyakov(7), V. A. Zinovyev(7), А. К. Гутаковский(6), Konstantin Romanyuk(6), К. С. Журавлев(6), А. Е. Dolbak(5), A. I. Nikiforov(5), А. И. Никифоров(4), S. I. Stenin(4), A. B. Talochkin(4), Е. М. Труханов(4), V. G. Mansurov(4), Т. В. Малин(4), A. I. Yakimov(3), Т. А. Гаврилова(3), J. V. Smagina(3), V. A. Armbrister(3)