Lars R. Schreiber

RWTH Aachen University — Germany

Physics and Astronomy · Physical Sciences

18h-index1.8kcitations105works6.52yr avg
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Research Topics

Quantum and electron transport phenomena(66), Advancements in Semiconductor Devices and Circuit Design(48), Semiconductor materials and devices(35), Semiconductor Quantum Structures and Devices(27), Quantum Computing Algorithms and Architecture(18)

Publications105 total

Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling
Zenodo (CERN European Organization for Nuclear Research)·2026Open Access
Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling
Zenodo (CERN European Organization for Nuclear Research)·2026Open Access
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Numerical simulation of coherent spin-shuttling in a QuBus with charged defects
arXiv (Cornell University)·2025Open Access
Reduction of the impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in $^{28}$Si/SiGe
arXiv (Cornell University)·2025Open Access
Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography
2025
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Applied Physics Letters·2025· 1 cited
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
ArXiv.org·2025Open Access
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
arXiv (Cornell University)·2025Open Access
Ultra-low-power cryogenic complementary metal oxide semiconductor technology
Nature Reviews Electrical Engineering·2025· 5 cited
Industrially Fabricated Single-Electron Quantum Dots in Si/Si—Ge Heterostructures
IEEE Electron Device Letters·2025· 8 cited
Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures
Journal of Applied Physics·2025· 3 citedOpen Access
Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures
JuSER Publikationsportal·2025Open Access
200 mm Wafer Level Characterization at 2 K of Si/SiGe Field-Effect Transistors
ECS Meeting Abstracts·2024
Strategies for Enhancing Spin-Shuttling Fidelities in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Si</mml:mi></mml:math>/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Si</mml:mi></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ge</mml:mi></mml:math> Quantum Wells with Random-Alloy Disorder
PRX Quantum·2024· 14 citedOpen Access
Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
arXiv (Cornell University)·2024· 1 citedOpen Access
200 mm Wafer Level Characterization at 2 K of Si/SiGe Field-Effect Transistors
ECS Transactions·2024
Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells
Advanced Science·2024· 10 citedOpen Access
Long distance spin shuttling enabled by few-parameter velocity optimization
arXiv (Cornell University)·2024Open Access
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Frequent Co-authors

Hendrik Bluhm(20), Inga Seidler(13), Dominique Bougeard(11), Ran Xue(10), Tom Struck(7), Andreas Schmidbauer(7), Łukasz Cywiński(7), Stefan Trellenkamp(7), Jhih‐Sian Tu(7), Max Oberländer(6), Jan Klos(6), Lieven M. K. Vandersypen(5), Arne Hollmann(5), N. V. Abrosimov(5), Matthias Künne(5), Eugen Kammerloher(5), M. Volmer(5), Bernd Beschoten(5), Joachim Knoch(5), Malte Neul(5)