Chioko Kaneta

Tohoku University — Japan

Engineering · Physical Sciences

15h-index864citations71works0.02yr avg
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Research Topics

Semiconductor materials and devices(39), Silicon Nanostructures and Photoluminescence(23), Silicon and Solar Cell Technologies(13), Graphene research and applications(10), Semiconductor materials and interfaces(10)

Publications71 total

Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation
AIP Advances·2022· 2 citedOpen Access
Optimization of a Heterogeneous Ternary Li<sub>3</sub>PO<sub>4</sub>–Li<sub>3</sub>BO<sub>3</sub>–Li<sub>2</sub>SO<sub>4</sub> Mixture for Li-Ion Conductivity by Machine Learning
The Journal of Physical Chemistry C·2020· 58 citedOpen Access
Materials informatics approach for design of Si/Ge layered nanostructures with low thermal conductivity
Japanese Journal of Applied Physics·2020
Optimization of heterogeneous ternary Li3PO4-Li3BO3-Li2SO4 mixture for Li-ion conductivity by machine learning
arXiv (Cornell University)·2019· 6 citedOpen Access
Li-Ion Conductive Li3PO4-Li3BO3-Li2SO4 Mixture: Prevision through Density Functional Molecular Dynamics and Machine Learning
Bulletin of the Chemical Society of Japan·2019· 15 cited
Materials Informatics Approach for Design of Si/Ge Layered Nanostructures with Low Thermal Conductivity
The Japan Society of Applied Physics·2019
Li-ion Conductive Li3PO4-Li3BO3-Li2SO4 Mixture: Prevision through Density Functional Molecular Dynamics and Machine Learning
2018Open Access
Li-ion Conductive Li3PO4-Li3BO3-Li2SO4 Mixture: Prevision through Density Functional Molecular Dynamics and Machine Learning
2018· 1 citedOpen Access
Atomistic mechanism of graphene growth on a SiC substrate: Large-scale molecular dynamics simulations based on a new charge-transfer bond-order type potential
Physical review. B./Physical review. B·2018· 20 citedOpen Access
First-Principles Molecular Dynamics Simulations of O 2 Oxidation in 4H-SiC/SiO 2 ~ Formation and Diffusion of C Clusters ~
The Japan Society of Applied Physics·2018
Size and temperature dependence of the energy gaps in Si, SiC and C quantum dots based on tight-binding molecular dynamics simulations
Journal of Physics Communications·2017· 12 citedOpen Access
Design of Si/Ge Layered Structure of Low Thermal Conductivity Using Materials Informatics
The Japan Society of Applied Physics·2017
Nano-second Order Molecular Dynamics Simulations for Graphene Growth Mechanism on SiC Surface - Formation of Six Membered Rings
The Japan Society of Applied Physics·2017
Design of Si/Ge Layered Structure of Low Thermal Conductivity Using Genetic Algorithm
The Japan Society of Applied Physics·2017
Thermal oxidation simulation of 4H-SiC by charge-transfer type molecular dynamics
The Japan Society of Applied Physics·2017
Charge-transfer interatomic potential for investigation of the thermal-oxidation growth process of silicon
Journal of Applied Physics·2016· 15 cited
Design of SiGe Alloy and Layered Structure of Low Thermal Conductivity: Phonon Mode analyses
The Japan Society of Applied Physics·2016
Design of SiGe Alloy with Low Thermal Conductivity: Molecular Dynamics Simulations
The Japan Society of Applied Physics·2016
Evaluation of Si/SiO 2 interface structure obtained by charge-transfer type molecular dynamics
The Japan Society of Applied Physics·2016
Electronic properties of B- or P-doped Si quantum dots ~ Doping-site dependence of impurity levels ~
The Japan Society of Applied Physics·2015
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Frequent Co-authors

Takahiro Yamasaki(18), Norihiko Takahashi(7), Hiroshi Katayama‐Yoshida(6), Hiroshi Yamada‐Kaneta(6), Akira Morita(5), Kenji Homma(5), Masato Sumita(5), Ryo Tamura(5), Koji Tsuda(5), Toshihiro Uchiyama(4), Tsuyoshi Uda(3), Kiyoyuki Terakura(3), Tsutomu Ogawa(3), Minoru Ikeda(3), Mari Ohfuchi(3), So Takamoto(3), Takahisa Ohno(3), Satoshi IZUMI(3), Naoki Fushimi(2), Junichi Iwata(2)