Wenzhong Bao

Chongqing University — China

Materials Science · Physical Sciences

63h-index35.2kcitations312works7.32yr avg
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Research Topics

Graphene research and applications(155), 2D Materials and Applications(98), Quantum and electron transport phenomena(46), Advanced Memory and Neural Computing(45), Ferroelectric and Negative Capacitance Devices(36)

Publications311 total

Hybrid-gate MoS2 2T0C DRAM for low-power multi-bit storage with high linearity
National Science Review·2025Open Access
Event vision sensor: principles, progress and prospects
IET conference proceedings.·2025
Forecasting the burden of insomnia: A call to action
Sleep Medicine Reviews·2025
Silicon Is Linked to Tea Quality Through Alteration Aluminum Uptake and Translocation in Camellia sinensis L.
Foods·2025Open Access
Synergistic Effect of SDS and Rha on Hydrate-Based Purification of Low-Concentration Coalbed Methane in the Presence of THF
Energy & Fuels·2025
A field-programmable gate array based on wafer-scale 2D semiconductor
National Science Review·2025· 1 citedOpen Access
Clinical study on the safety of omitting abdominal drainage in laparoscopic appendectomy for adult acute perforated appendicitis
Medicine·2025Open Access
Dual‐Mode Neuromorphic Device Based on MoS<sub>2</sub> 2T0C DRAM for Neurons and Synapses
Small·2025
High-linearity flash ADC achieved through design-technology co-optimization based on two-dimensional semiconductor
Science Bulletin·2025
Integrated two-dimensional microwave transmitters fabricated on the wafer scale
Nature Electronics·2025· 1 cited
Review: The anti-friction and anti-wear mechanism of lubricate oil additives in the piston ring-cylinder liner system of engines
Industrial Lubrication and Tribology·2025
A biologically inspired artificial neuron with intrinsic plasticity based on monolayer molybdenum disulfide
Nature Electronics·2025· 16 cited
Quantized Topological States and Parity Anomaly in Intrinsic Quantum Anomalous Hall Insulator MnBi2Te4
ArXiv.org·2025Open Access
Correction: A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials
Nano-Micro Letters·2025Open Access
Efficient electrical properties modulation of wafer-scale top gated MoS2 transistors via non-destructive annealing
Journal of Material Science and Technology·2025· 1 cited
Author response for "Review: The anti-friction and anti-wear mechanism of lubricate oil additives in the piston ring-cylinder liner system of engines"
2025
A RISC-V 32-bit microprocessor based on two-dimensional semiconductors
Nature·2025· 53 cited
A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials
Nano-Micro Letters·2025· 3 citedOpen Access
A Controllable and CMOS Compatible Doping Process for 2D Integrated Circuits
2025
A Controlled Metal Doping Method Based on MoS<sub>2</sub> Top-Gate Transistor
2025
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Frequent Co-authors

Chun Ning Lau(26), Feng Miao(11), Peng Zhou(11), Alexander A. Balandin(8), Irene Calizo(7), Jiayu Wan(7), Liangbing Hu(7), Jiaqi Dai(6), Hao Zhu(6), Lin Chen(6), Qingqing Sun(6), David Wei Zhang(6), Zhengzong Sun(6), Jairo Velasco(5), Zihan Xu(5), Shi‐Jin Ding(5), Chris Dames(4), Marc Bockrath(4), Tianyu Wang(4), Suchismita Ghosh(3)