Jae‐Seong Park

Yonsei University — South Korea

Engineering · Physical Sciences

14h-index1.0kcitations108works3.52yr avg
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Research Topics

Photonic and Optical Devices(25), Semiconductor Quantum Structures and Devices(24), GaN-based semiconductor devices and materials(20), Semiconductor Lasers and Optical Devices(17), Semiconductor materials and devices(13)

Publications108 total

InAs/InAlGaAs Quantum Dot Lasers on InP and Si
IEEE Journal of Selected Topics in Quantum Electronics·2025Open Access
Lactobacillus delbrueckii subsp. lactis CKDB001 Ameliorates Scopolamine-Induced Cognitive Impairment Through Metabolic Modulation
International Journal of Molecular Sciences·2025Open Access
Self‐Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy
Advanced Materials Interfaces·2025Open Access
Exceptionally low electrical hysteresis, soft, skin-mimicking gelatin-based conductive hydrogels for machine learning-assisted wireless wearable sensors
Chemical Engineering Journal·2025· 2 cited
High Performance Monolithic Integration of Light Amplifiers in Silicon Photonic Circuits
2025Open Access
Optimisation of argon plasma pre-treatment for enhanced silicon surface preparation for germanium epitaxy
Journal of Physics D Applied Physics·2025· 2 citedOpen Access
As-Flux-Induced Diameter Control in GaAs Nanowires
The Journal of Physical Chemistry C·2025Open Access
Poster: A Routing Algorithm for Enhancing TCP Performance in LEO Satellite Networks
2025
MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si
Journal of Physics D Applied Physics·2025· 1 citedOpen Access
Tannic Acid-Enhanced Cellulose/PEDOT:PSS Films Exhibiting Low Electrical Hysteresis, UV Blocking, and Antibacterial Properties for Wearable Sensing
ACS Sustainable Chemistry & Engineering·2025· 1 cited
MOCVD-grown InAs/InP quantum dot lasers with low threshold current
Optics Express·2025· 1 citedOpen Access
GaAs Growth on Ge‐Buffered Discontinuous (111)‐Faceted V‐Groove Silicon Substrates
Advanced Physics Research·2025· 1 citedOpen Access
Low threshold InAs/InP quantum dot lasers
Optics Express·2025· 5 citedOpen Access
Low threshold InAs/InP quantum dot lasers on Si
2025· 1 cited
High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique
Journal of Physics D Applied Physics·2025· 5 citedOpen Access
The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
Journal of Physics D Applied Physics·2025· 2 citedOpen Access
Exceptionally Low Electrical Hysteresis, Soft, Skin-Mimicking Gelatin-Based Conductive Hydrogels for Machine Learning-Assisted Wireless Wearable Sensors
SSRN Electronic Journal·2025Open Access
Exceptionally Low Electrical Hysteresis, Soft, Skin-Mimicking Gelatin-Based Conductive Hydrogels for Machine Learning-Assisted Wireless Wearable Sensors
SSRN Electronic Journal·2025Open Access
Indium-flush technique for C-band InAs/InP quantum dots
APL Materials·2024· 6 citedOpen Access
Quantum dots synthesis within ternary III–V nanowire towards light emitters in quantum photonic circuits: a review
Nanotechnology·2024· 3 citedOpen Access
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Frequent Co-authors

Huiyun Liu(21), Mingchu Tang(19), Tae‐Yeon Seong(19), Siming Chen(18), A.J. Seeds(13), Huiwen Deng(10), Hui Jia(8), Junjie Yang(7), Daehyun Kim(7), Daesung Kang(7), Haotian Zeng(6), Zizhuo Liu(5), Jaecheon Han(5), Pamela Jurczak(4), Shujie Pan(4), Xuezhe Yu(4), Taojie Zhou(4), Sun‐Kyung Kim(4), T. Baron(3), Zhaoyu Zhang(3)