Jang‐Sik Lee

Pohang University of Science and Technology — South Korea

Engineering · Physical Sciences

51h-index9.6kcitations217works3.52yr avg
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Research Topics

Advanced Memory and Neural Computing(103), Semiconductor materials and devices(59), Ferroelectric and Negative Capacitance Devices(46), Ferroelectric and Piezoelectric Materials(34), Conducting polymers and applications(27)

Publications216 total

Single-crystalline BaTiO <sub>3</sub> -based ferroelectric capacitive memory via membrane transfer
Science Advances·2025Open Access
Cost-efficient Processing-in-Memory Architecture with Training-free and Universal Error Compensation
2025
Sub-unit-cell-segmented ferroelectricity in brownmillerite oxides by phonon decoupling
Nature Materials·2025· 2 cited
Roadmap on metal-halide perovskite semiconductors and devices
Materials Today Electronics·2025· 10 citedOpen Access
Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors
IEEE Journal of the Electron Devices Society·2025Open Access
(Invited) Ferroelectric Thin-Film Transistors for Memory and Neuromorphic Device Applications
ECS Meeting Abstracts·2024
Hafnia-Based Ferroelectric Transistor with Poly-Si Gates for Gate-First Three-Dimensional NAND Structures
ACS Applied Materials & Interfaces·2024· 1 cited
EDM: Enhancing Quality Diversity of Medical Image Augmentation Under the User-specified Complex and Various Conditions
2024
Crystal Filter-Mediated Grain Alignment in Poly-Si Thin-Film Transistors for Next-Generation Ferroelectric Memory Devices
IEEE Electron Device Letters·2024· 1 cited
Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology
ACS Applied Materials & Interfaces·2024· 6 cited
Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors
Science Advances·2024· 19 citedOpen Access
Ferroelectric Transistor With Grooved Structure for Reliable Multi-Level Characteristics
IEEE Electron Device Letters·2023· 4 cited
Dopant Engineering of Hafnia‐Based Ferroelectrics for Long Data Retention and High Thermal Stability
Small·2023· 8 citedOpen Access
Simplifying Dosimetry by Voxel-wise Activity Prediction with Regularized nCDE Encoder-nODE Decoder
2023
Generation of multi-tracer PET attenuation maps using zero-shot learning
2023
Demonstration of the threshold-switching memory devices using EMIm(AlCl<sub>3</sub>)Cl and ZnO for neuromorphic applications
Nanotechnology·2023· 1 cited
Low-Thermal-Budget Fabrication of Transparent Ferroelectric Thin-Film Transistors on Glass Substrates
IEEE Electron Device Letters·2023· 3 cited
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
ACS Nano·2023· 242 citedOpen Access
Analysis of warpage in multi-layer printed circuit boards depending on the trace structure
2023Open Access
Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications
ACS Omega·2023· 11 citedOpen Access
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Frequent Co-authors

Min‐Kyu Kim(11), Ik‐Jyae Kim(6), Bohee Hwang(6), Q. X. Jia(6), Niloufar Raeis‐Hosseini(5), Youngjun Park(4), Young‐Jun Park(4), Hyunjung Shin(3), Ying Li(3), Chungwan Gu(2), Soo‐Jin Kim(2), Jaegab Lee(2), Donghwa Lee(2), Yong‐Mu Kim(2), Jeong‐Hwa Kwon(2), Byeong‐Hyeok Sohn(2), J. K. Lee(2), M. Nastasi(2), S. A. Crooker(2), Jinhan Cho(1)