Ryosho Nakane

Tokyo University of Information Sciences — Japan

Engineering · Physical Sciences

28h-index4.9kcitations225works1.92yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(90), Semiconductor materials and devices(89), Advanced Memory and Neural Computing(76), Neural Networks and Reservoir Computing(73), Ferroelectric and Negative Capacitance Devices(38)

Publications225 total

Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation
IEEE Transactions on Electron Devices·2025
Spin-transport characteristics in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET): Bias dependence of the spin polarization in Si and magnetoresistance in spin-valve signals
arXiv (Cornell University)·2025Open Access
Physical reservoir computing using ferroelectric Hf<sub>1−<i>x</i> </sub>Zr<sub> <i>x</i> </sub>O<sub>2</sub> devices for efficient temporal data processing: recent progress of materials, devices, and operating modes
Japanese Journal of Applied Physics·2025· 1 cited
Spin injection in Si-based ferromagnetic tunnel junctions with MgO/MgAl2O4 barriers: Experimental and theoretical investigation of barrier thickness-dependent spin tunneling efficiency
arXiv (Cornell University)·2025Open Access
A Demonstration of Analog/Digital Converter-Free Reservoir Computing Using a Series-Connected Resonating Switched MEMS Counter
2025
Voltage-mode reservoir computing with ferroelectric CMOS inverters
Applied Physics Express·2025· 2 citedOpen Access
Wavelength-Selective Waveguide Photodetector Utilizing Surface Plasmon Resonance
2025
Hardware-friendly implementation of physical reservoir computing with CMOS-based time-domain analog spiking neurons
Neuromorphic Computing and Engineering·2025· 1 citedOpen Access
Advantage and Challenge of Electrical Critical Dimension Test Structures for Electroplated High Aspect Ratio Nano Structures (HARNS) on Insulating Materials
2025· 1 cited
Polarization current-based reservoir computing utilizing an anti-ferroelectric-like HfZrO2 capacitor
APL Machine Learning·2025· 4 citedOpen Access
Voltage-operating reservoir computing utilizing ferroelectric-FET source follower configurations
Japanese Journal of Applied Physics·2025· 5 cited
Opportunities of CMOS-MEMS integration for computing and other applications
IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences·2025Open Access
Spin injection and detection in a Si-based ferromagnetic tunnel junction: Theoretical model based on the band diagram and experimental demonstration
Physical review. B./Physical review. B·2024
Ferroelectric Transistor-Based Reservoir Computing : Machine Learning for Time-Series Data Processing
Vacuum and Surface Science·2024Open Access
Hardware-Friendly Implementation of Physical Reservoir Computing with CMOS-based Time-domain Analog Spiking Neurons
arXiv (Cornell University)·2024Open Access
Voltage-Operating Reservoir Computing Utilizing a Ferroelectric Source Follower
2024
Reservoir Computing Utilizing a Complementary Combination of <i>n</i>- and <i>p</i>-Channel FeFETs
IEEE Electron Device Letters·2024· 6 cited
Reservoir computing using nonlinear polarization and charge dynamics of anti-ferroelectric HZO/Si FETs
2024· 3 cited
Su-Schrieffer-Heeger Topological Electrical Circuit Using In-Plane Mutual Inductance
2024· 1 cited
An Add-in Test Structure Chip to Unitedly Assess PVD Material Properties in University Open Nanotechnology Platform
2024
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Frequent Co-authors

Shinichi Takagi(26), Mitsuru Takenaka(26), Masafumi Yokoyama(17), Satoshi Sugahara(11), Noriyuki Taoka(11), Sanghyeon Kim(11), Gouhei Tanaka(9), Masahiko Hata(9), Tetsuji Yasuda(9), Noboru Fukuhara(9), Masaaki Tanaka(8), Akira Hirose(6), Osamu Ichikawa(6), Ryo Iida(6), Sunghoon Lee(6), Yuji Urabe(6), Noriyuki Miyata(6), Hisashi Yamada(6), Toshiyuki Yamane(5), Daiju Nakano(5)