R. Malmqvist

Swedish Defence Research Agency — Sweden

Engineering · Physical Sciences

11h-index419citations76works1.02yr avg
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Research Topics

Microwave Engineering and Waveguides(54), Radio Frequency Integrated Circuit Design(44), Advanced MEMS and NEMS Technologies(25), Acoustic Wave Resonator Technologies(21), Antenna Design and Analysis(10)

Publications76 total

High-Linearity and Low-Noise Tunable C/X-Band GaN Filters for Robust Highly Integrated Front-Ends
2024· 1 cited
Cross-Over Wire-Bonding for Millimeter-Wave Applications
IEEE Electron Device Letters·2023· 6 citedOpen Access
Integrating InP MMICs and Silicon Micromachined Waveguides for Sub-THz Systems
IEEE Electron Device Letters·2023· 6 citedOpen Access
Compact High-Gain Driver Amplifier MMICs for 60 nm GaN-on-Si W-Band Single-Chip Transceivers
2022· 1 cited
A W-Band Up-Conversion Mixer with Integrated LO Frequency Doublers in a 60 nm GaN Technology
2022· 5 cited
A W-Band Single-Chip Receiver in a 60 nm GaN-on-Silicon Foundry Process
2022· 6 cited
E/W-Band CPW-based Amplifier MMICs Fabricated in a 60 nm GaN-on-Silicon Foundry Process
Zenodo (CERN European Organization for Nuclear Research)·2021· 3 citedOpen Access
A 220–325 GHz low-loss micromachined waveguide power divider
2017· 13 citedOpen Access
A 230–300 GHz low-loss micromachined waveguide hybrid coupler
2017· 16 citedOpen Access
A fully encapsulated waveguide coupled passive imaging W-band radiometer module with RF frontend IC in a SiGe-BiCMOS technology
2016· 3 cited
An RF-MEMS based SP4T switched LNA MMIC used in a 24 GHz beam-steering antenna module
2015· 3 cited
5–35 GHz broadband if amplifier section in 0.13 μm SiGe technology for <scp>W</scp>‐band heterodyne receiver RFICs
Microwave and Optical Technology Letters·2015· 1 cited
A W-band RF-MEMS switched LNA in a 70 nm mHEMT process
International Journal of RF and Microwave Computer-Aided Engineering·2015· 3 cited
Broadband IF Amplifier Section in 0.13 µm SiGe Technology for SoC W-Band Direct-Conversion Radiometers
2015
30 GHz RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology
Advances in microelectronic engineering·2015
A W‐band power detector RFIC design in 0.13 μm SiGe BiCMOS process
Microwave and Optical Technology Letters·2014· 5 cited
SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers
IET Microwaves Antennas & Propagation·2014· 5 citedOpen Access
Design and results of W-band power detectors in a 130 nm SiGe BiCMOS process technology
2014· 7 cited
Broadband IF Amplifier Section in 0.13-µm SiGe Technology for SOC W-Band Radiometers.
IEEE Microwave and Wireless Components Letters·2014
Monolithic Integration of an RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology
Active and Passive Electronic Components·2014Open Access
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Frequent Co-authors

C. Samuelsson(26), T. Vähä-Heikkilä(20), S. Reyaz(14), Pekka Rantakari(13), Rens Baggen(13), Anders Rydberg(10), Derek Smith(10), Anders Gustafsson(10), A. Ouacha(9), Andreas Gustafsson(9), J. Varis(8), Mehmet Kaynak(7), W. Simon(6), Robert Jönsson(5), M. Danestig(5), Jan Svedin(4), Umer Shah(4), Joachim Oberhammer(4), R. Erickson(4), S. Rudner(4)