T. Fukuzawa

Physics and Astronomy · Physical Sciences

10h-index792citations28works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(19), Semiconductor Lasers and Optical Devices(10), Photonic and Optical Devices(7), Quantum and electron transport phenomena(5), Spectroscopy and Laser Applications(5)

Publications28 total

Recombination emission of the X-point electron and theΓ-point hole in the AlGaAs/AlAs type II quantum wells
IEICE Technical Report; IEICE Tech. Rep.·2014
Phase transition in a two-dimensional dipole-oriented exciton system
Superlattices and Microstructures·1998
Anomalous Diffusion of Repulsive Bosons in a Two-Dimensional Random Potential
1997
A diffusion anomaly in dipole-oriented two-dimensional excitons in GaAs/AlGaAs coupled quantum wells
Il Nuovo Cimento D·1995· 1 cited
A possibility of exciton luminescence with Boson correlation in a coupled QW
Superlattices and Microstructures·1994· 2 cited
Kash<i>et al</i>. reply
Physical Review Letters·1992· 5 cited
&lt;title&gt;Exciton thermodynamics in coupled quantum wells (Invited Paper)&lt;/title&gt;
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1992
Thermodynamics of excitons in coupled quantum wells
Surface Science·1992· 2 cited
Fermi-Dirac distribution of excitons in coupled quantum wells
Physical Review Letters·1991· 119 cited
Electric-field effects on exciton lifetimes in symmetric coupled GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>As double quantum wells
Physical review. B, Condensed matter·1990· 97 cited
Phase transition of an exciton system in GaAs coupled quantum wells
Physical Review Letters·1990· 248 cited
Possibility of coherent light emission from Bose condensed states in quantum-well systems
IEEE Journal of Quantum Electronics·1990· 5 cited
Possibility of coherent light emission from Bose condensed states of SEHPs
Surface Science·1990· 50 cited
ChemInform Abstract: Physical and Electrical Properties of Silicon Nitride and Silicon Nitride‐Indium Phosphide Interface
ChemInform·1990
Physical and Electrical Properties of Silicon Nitride and Silicon Nitride‐Indium Phosphide Interface
Journal of The Electrochemical Society·1989· 8 cited
Device characteristics of GaAlAs buried-multiquantum-well lasers fabricated by Zn-diffusion-induced disordering
IEEE Journal of Quantum Electronics·1985· 28 cited
GaAlAs buried multiquantum well lasers fabricated by diffusion-induced disordering
Applied Physics Letters·1984· 109 cited
GaAlAs buried multi-quantum-well laser fabricated by diffusion induced disordering
1983· 1 cited
Fabrication of GaAlAs Multi-Quantum-Well Buried Heterostructure Lasers Using Diffusion-Induced Disordering
1983· 1 cited
Integration of a Laser Diode and a Twin FET
Japanese Journal of Applied Physics·1981· 8 cited
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Frequent Co-authors

E. E. Méndez(6), M. Zachau(5), T. Kuroda(5), E. Yamada(5), J. A. Kash(4), Shigeru Semura(4), T. K. Gustafson(4), J. M. Hong(3), Jongill Hong(3), M. Nakamura(3), Hiroshi Nakashima(3), T. OHTA(3), Y. Uchida(3), Hideaki Matsueda(3), Hiroshi Saito(2), M. Hirao(2), J. Umeda(2), K. Kobayashi(2), Michiharu Nakamura(2), Tsuneaki Ohta(1)