G. Haacke

Physics and Astronomy · Physical Sciences

21h-index3.3kcitations46works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(14), Semiconductor materials and devices(8), Chalcogenide Semiconductor Thin Films(7), Quantum Dots Synthesis And Properties(5), Silicon and Solar Cell Technologies(5)

Publications46 total

Chemisorption and physical adsorption of light stabilizers on pigment and ultrafine particles in coatings
Journal of Coatings Technology·1999· 26 cited
Depth Distribution of Light Stabilizers in Coatings Analyzed by Supercritical Fluid Extraction-Gas Chromatography and Time-of-Flight Secondary Ion Mass Spectrometry
Analytical Chemistry·1998· 13 cited
Interactions between light stabilizers and pigment particles in polymeric coatings
Progress in Organic Coatings·1998· 17 cited
Transport measurements and donor spectra of very high purity GaAs grown using tertiarybutylarsine and triethylgallium
Journal of Applied Physics·1994· 10 cited
Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine
Journal of Applied Physics·1992· 11 cited
Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine
Applied Physics Letters·1991· 38 cited
Sources of donor impurities in undoped GaAs grown using arsine and trimethylgallium
Journal of Applied Physics·1991· 5 cited
Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs
Journal of Crystal Growth·1991· 39 cited
Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgallium
Applied Physics Letters·1990· 45 cited
Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine
Applied Physics Letters·1989· 62 citedOpen Access
Metalorganic Chemical Vapor Deposition of High Quality GaAs and AlGaAs Using Tertiarybutylarsine
MRS Proceedings·1989· 5 cited
Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition
Journal of Applied Physics·1988· 18 cited
Arsine Adsorption on Activated Carbon
Journal of The Electrochemical Society·1988· 28 cited
Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor deposition
Applied Physics Letters·1988· 19 cited
Transparent heat mirror characteristics of cadmium indate
Solar Energy Materials·1986· 4 cited
Reactive sputtering from a CdSn target
Thin Solid Films·1986· 9 cited
Transparent Heat Mirror Characteristics Of Cadmium Indate
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1985
<title>Materials For Transparent Heat Mirror Coatings</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1982· 9 cited
Sputter deposition and characterization of Cd2SnO4 films
Thin Solid Films·1978· 85 cited
ChemInform Abstract: SPRAY DEPOSITION OF CADMIUM STANNATE FILMS
Chemischer Informationsdienst·1978
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Frequent Co-authors

S. P. Watkins(10), H. Burkhard(6), L. C. Burton(6), W. E. Mealmaker(3), L. C. Beegle(3), J. S. Brinen(3), F. F. Andrawes(3), Arthur J. Nozik(2), Hiroshi Andō(2), George Castellion(2), Donald P. Spitzer(2), E. Longordo(2), Bri Campbell(2), T. L. Hench(2), G. Storti(2), U. Birkholz(2), Jonathan Wood(1), L. A. Siegel(1), H. Buckhard(1), M. L. W. Thewalt(1)