Guru Mathur

Texas Instruments (United States) — United States

Engineering · Physical Sciences

12h-index680citations35works0.02yr avg
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Research Topics

Semiconductor materials and devices(20), Molecular Junctions and Nanostructures(18), Advancements in Semiconductor Devices and Circuit Design(11), Semiconductor Quantum Structures and Devices(5), Nanowire Synthesis and Applications(5)

Publications35 total

Identification of Channel Hot Carrier Stress-Induced Oxide Traps Leading to Random Telegraph Signals in pMOSFETs
IEEE Transactions on Electron Devices·2020· 6 cited
Two Types of <inline-formula> <tex-math notation="LaTeX">${E}^{\prime}$ </tex-math> </inline-formula> Centers as Gate Oxide Defects Responsible for Hole Trapping and Random Telegraph Signals in pMOSFETs
IEEE Transactions on Electron Devices·2018· 9 cited
Application of a Quantum-Well Silicon NMOS Transistor as a Folding Amplifier Frequency Multiplier
IEEE Journal of the Electron Devices Society·2017· 2 citedOpen Access
A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects
IEEE Transactions on Electron Devices·2016· 12 cited
Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics·2015· 9 cited
Design and optimization on ESD self-protection schemes for 700V LDMOS in high voltage power IC
2015· 10 cited
A scalable random telegraph signal simulation based on experimentally — Identified gate oxide defects
2015
Negative Differential Transconductance in Silicon Quantum Well MOSFET/Bipolar Hybrid Transistors
Bulletin of the American Physical Society·2015
Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors
Applied Physics Letters·2014· 11 cited
Negative Differential Transconductance in Silicon CMOS Quantum Well Field Effect Transistors
Bulletin of the American Physical Society·2014· 1 cited
Simulation and modeling of hot carrier degradation of cascoded NMOS transistors for power management applications
2012· 4 cited
Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates
Applied Physics Letters·2007· 17 cited
Hybrid silicon/molecular FETs: a study of the interaction of redox-active molecules with silicon MOSFETs
IEEE Transactions on Nanotechnology·2006· 15 cited
Engineering Tunnel Barriers in Hybrid Silicon/Molecular Memory Devices
2006 Sixth IEEE Conference on Nanotechnology·2006
Approach for investigating lateral conduction in self-assembled monolayers
Applied Physics Letters·2005· 1 cited
Threshold voltage-assisted reduction of molecules in hybrid silicon/molecular memory devices
2005· 1 cited
Modulation of drain current by redox-active molecules incorporated in Si MOSFETs
2005· 9 cited
Properties of Functionalized Redox-Active Monolayers on Thin Silicon Dioxide—A Study of the Dependence of Retention Time on Oxide Thickness
IEEE Transactions on Nanotechnology·2005· 15 cited
Redox-active monolayers on nano-scale silicon electrodes
Nanotechnology·2005· 17 cited
Multiple-bit storage properties of porphyrin monolayers on SiO2
Applied Physics Letters·2004· 45 cited
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Frequent Co-authors

Veena Misra(18), Srivardhan Gowda(13), Shyam Surthi(11), Jonathan S. Lindsey(11), David F. Bocian(9), Qiliang Li(7), Qian Zhao(6), Kannan Muthukumaran(5), Clint Naquin(5), Seongkwan Mark Lee(5), Hal Edwards(5), Tathagata Chatterjee(5), Robert S. Loewe(4), Arounaguiry Ambroise(4), Shun‐ichi Tamaru(4), Zeynep Çelik‐Butler(4), Fan-Chi Hou(4), Ken Maggio(4), Qiliang Li(3), Shaoping Tang(3)