Nandan Tandon

Michigan State University — United States

Materials Science · Physical Sciences

8h-index548citations23works3.02yr avg
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Research Topics

Ga2O3 and related materials(9), Electronic and Structural Properties of Oxides(8), ZnO doping and properties(5), Semiconductor Quantum Structures and Devices(4), High-pressure geophysics and materials(4)

Publications23 total

Electron–Phonon Coupling and Carrier Relaxation Times in Gallium Antimonide Under Strain
Journal of Electronic Materials·2024· 3 citedOpen Access
Evaluating diffusion barriers of defects in boron ion implanted diamond
Diamond and Related Materials·2023· 4 cited
Defect Configurations and Ionization Energies of Carbon Vacancies, Hydrogen, Boron and Their Complexes in Diamond
Journal of Electronic Materials·2021· 2 cited
Effect of hydrostatic pressure on the electron-phonon scattering in GaAs
Journal of Applied Physics·2019· 3 cited
Effects of strain on the optical and thermodynamic properties of β-Ga2O3
Solid State Communications·2019· 15 cited
Electron–Phonon Scattering in AlAs and Its Response to Hydrostatic Pressure
Journal of Electronic Materials·2018· 5 cited
Effect of strain on the optical and mechanical properties of $\beta-\text{Ga}_2\text{O}_3$
Bulletin of the American Physical Society·2017
Electron-phonon scattering rates in GaAs and AlAs under hydrostatic pressure
Bulletin of the American Physical Society·2017
Effect of strain on the optical and mechanical properties of β -Ga 2 O 3
APS March Meeting Abstracts·2017
Erratum: “Lattice thermal conductivity in β-Ga2O3 from first principles” [Appl. Phys. Lett. <b>107</b>, 041907 (2015)]
Applied Physics Letters·2016· 7 citedOpen Access
Thermal Properties of β-Ga2O3 from First Principles
MRS Advances·2016· 4 cited
Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering
Journal of Applied Physics·2015· 38 cited
Lattice thermal conductivity in β-Ga2O3 from first principles
Applied Physics Letters·2015· 201 cited
Electron–phonon coupling and associated scattering rates in diamond
Diamond and Related Materials·2015· 34 cited
Carrier lifetimes in group-IV semiconductors
Bulletin of the American Physical Society·2014
Erratum: First-principles study of possible shallow donors in ZnAl<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>4</mml:mn></mml:msub></mml:math>spinel [Phys. Rev. B<b>87</b>, 174101 (2013)]
Physical Review B·2013· 2 citedOpen Access
First-principles study of possible shallow donors in ZnAl<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>4</mml:mn></mml:msub></mml:math>spinel
Physical Review B·2013· 62 citedOpen Access
Variation of electron-phonon coupling in group IV elemental semiconductors
Bulletin of the American Physical Society·2013
Electron phonon coupling and carrier lifetimes in III-nitride ternary semiconductors
Bulletin of the American Physical Society·2012
Electronic structure and band gap of zinc spinel oxides beyond LDA: ZnAl<sub>2</sub>O<sub>4</sub>, ZnGa<sub>2</sub>O<sub>4</sub>and ZnIn<sub>2</sub>O<sub>4</sub>
New Journal of Physics·2011· 124 citedOpen Access
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Frequent Co-authors

John D. Albrecht(14), L. R. Ram‐Mohan(8), Marco D. Santia(6), Hemant Dixit(3), Stefaan Cottenier(3), R. Saniz(3), D. Lamoen(3), B. Partoens(3), G. P. Das(2), Anjali Kshirsagar(2), T.A. Grotjohn(2), Véronique Van Speybroeck(1), Michel Waroquier(1), Ştefan C. Bǎdescu(1), Lisa Pugsley(1), Paul Gregory Kassebaum(1)