Mohana K. Rajpalke

Microsoft (United States) — United States

Physics and Astronomy · Physical Sciences

21h-index1.6kcitations83works25.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(57), Ga2O3 and related materials(33), Semiconductor Quantum Structures and Devices(30), Semiconductor materials and devices(21), Nanowire Synthesis and Applications(16)

Publications80 total

Enhancing the performance of Ga(In)NAs intermediate-band solar cells
Journal of Physics Energy·2025Open Access
InAs-Al hybrid devices passing the topological gap protocol
Physical review. B./Physical review. B·2023· 186 citedOpen Access
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
arXiv (Cornell University)·2022· 15 citedOpen Access
Doubling the mobility of InAs/InGaAs selective area grown nanowires
Physical Review Materials·2022· 15 citedOpen Access
Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED
Ultramicroscopy·2021· 2 citedOpen Access
The role of growth temperature on the electron mobility of InAs/In$_x$Ga$_{1-x}$As selective area grown nanowires
arXiv (Cornell University)·2021Open Access
Doubling the mobility of InAs/InGaAs selective area grown nanowires
arXiv (Cornell University)·2021· 1 citedOpen Access
The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene
Scientific Reports·2020· 13 citedOpen Access
Erratum: Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer ( <i>Nanotechnology</i> 30 015604)
Nanotechnology·2018· 3 citedOpen Access
Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys
Journal of Physics D Applied Physics·2018Open Access
Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer
Nanotechnology·2018· 28 citedOpen Access
Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2
APL Materials·2018· 21 citedOpen Access
Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys
Journal of Physics D Applied Physics·2017· 8 citedOpen Access
Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors
Scientific Reports·2017· 25 citedOpen Access
Band gap reduction in InN<i>x</i>Sb1-<i>x</i> alloys: Optical absorption, k · P modeling, and density functional theory
Applied Physics Letters·2016· 9 citedOpen Access
Binary group III-nitride based heterostructures: band offsets and transport properties
Journal of Physics D Applied Physics·2015· 75 citedOpen Access
Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite
Nano Letters·2015· 40 citedOpen Access
Bi flux-dependent MBE growth of GaSbBi alloys
Journal of Crystal Growth·2015· 30 citedOpen Access
Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy
Nano Letters·2015· 63 cited
Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires
Nano Research·2014· 64 cited
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Frequent Co-authors

Mahesh Kumar(30), Thirumaleshwara N. Bhat(30), S. B. Krupanidhi(30), Basanta Roul(27), A. T. Kalghatgi(22), T. D. Veal(15), Neeraj Sinha(14), W. M. Linhart(10), M. J. Ashwin(9), K. M. Yu(6), T. S. Jones(5), Jan Kopaczek(5), R. Kudrawiec(5), Ezekiel A. Anyebe(5), Qiandong Zhuang(5), Max Birkett(4), Ana M. Sánchez(4), Pankaj Misra(4), L. M. Kukreja(4), David O. Scanlon(3)