I. Vickridge

Centre National de la Recherche Scientifique — France

Engineering · Physical Sciences

24h-index2.4kcitations191works0.92yr avg
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Research Topics

Semiconductor materials and devices(51), Ion-surface interactions and analysis(39), X-ray Spectroscopy and Fluorescence Analysis(31), Electron and X-Ray Spectroscopy Techniques(25), Nuclear Physics and Applications(19)

Publications191 total

Infrared Nanocrystals for Space Application: Hardness to Irradiations
Advanced Functional Materials·2026Open Access
IAEA inter-comparison of PIGE analysis codes II – depth profiling
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2026· 1 cited
Electronic band structure engineering in ALD HfO2: Linking impurity chemistry to electronic performance and charge transport
Acta Materialia·2025
Temperature-dependent impurity control and electronic structure optimization in ALD-deposited Al2O3 films for enhanced functional applications
Surfaces and Interfaces·2025Open Access
Defect Chemistry Engineered SnO<sub>2</sub> Thin Films via Thermal ALD: Unraveling Defect-Controlled Electronic Structure for Charge Transport
ACS Applied Materials & Interfaces·2025· 1 cited
Development of ion-beam sputtered silicon nitride thin films for low-noise mirror coatings of gravitational-wave detectors
Physical review. D/Physical review. D.·2025· 4 citedOpen Access
Isotopic labelling study of Oxygen and Hydrogen in surface analysis of metal oxides
Applied Surface Science·2025· 1 citedOpen Access
Exploring OH incorporation pathways in pulsed laser deposited EuOOH thin films
Applied Surface Science·2024· 2 citedOpen Access
Eu-doped 2D molybdenum oxide nanocrystals for integration in photonic components
2024
Exploring Oh Incorporation Pathways in Pulsed Laser Deposited Euooh Thin Films
SSRN Electronic Journal·2024Open Access
Elastic backscattering during boron implantation in Si1-Ge
Vacuum·2023· 3 citedOpen Access
A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300 °C
Vacuum·2023· 10 citedOpen Access
Combined x‐ray reflectivity and grazing incidence x‐ray fluorescence study of Ta/Cr/Pt thin film stacks
X-Ray Spectrometry·2023· 4 citedOpen Access
Elastic Backscattering During Boron Implantation in Si1-Xge X
SSRN Electronic Journal·2023Open Access
Investigation of Chemical Composition and Corrosion Performance of Tio2 Films Formed by Ald
SSRN Electronic Journal·2023Open Access
Water-rich conditions during titania atomic layer deposition in the 100 °C-300 °C temperature window produce films with TiIV oxidation state but large H and O content variations
Applied Surface Science·2022· 7 citedOpen Access
Data of paper Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies
Zenodo (CERN European Organization for Nuclear Research)·2022Open Access
Data of paper Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies
Zenodo (CERN European Organization for Nuclear Research)·2022Open Access
Measurement of (p,p) elastic differential cross sections for 17O in the 0.6–2 MeV range at 165°
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2022· 2 citedOpen Access
Unique orientation of 1D and 2D nanoparticle assemblies confined in smectic topological defects
Soft Matter·2022· 13 citedOpen Access
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Frequent Co-authors

J.‐J. Ganem(9), I. Trimaille(7), G. Battistig(6), R. Serna(6), C. N. Afonso(6), Emrick Briand(5), Jean‐Jacques Ganem(4), M. Jiménez de Castro(4), S. Rigo(4), Philippe Marcus(3), C. Jeynes(3), P. Skeldon(3), Magali Morales(3), A. Suárez-Garcı́a(3), E. Briand(3), E. Szilágyi(3), Jolanta Światowska(2), Vincent Maurice(2), Sandrine Zanna(2), Lorena H. Klein(2)