D. S. Abramkin

Institute of Semiconductor Physics — Russia

Physics and Astronomy · Physical Sciences

11h-index361citations39works0.52yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(31), Advanced Semiconductor Detectors and Materials(19), Quantum Dots Synthesis And Properties(9), Semiconductor materials and devices(7), Semiconductor materials and interfaces(7)

Publications39 total

Prospects of using self-assembled GaN/AlN quantum dots for universal memory elements
Journal of Physics and Chemistry of Solids·2025
Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate
Nanomaterials·2024· 1 citedOpen Access
Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots
Nanomaterials·2023· 17 citedOpen Access
Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
Nanomaterials·2022· 17 citedOpen Access
Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories
Nanomaterials·2022· 17 citedOpen Access
Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy
Semiconductors·2021· 6 cited
Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates
Semiconductors·2020· 3 cited
Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In<sub>2</sub>O<sub>3</sub>:Er films.
Materials Research Express·2020· 4 citedOpen Access
Влияние кристаллографической ориентации пленок GaSb на их структурные свойства при гетероэпитаксии на вицинальных подложках Si(001) методом молекулярно-лучевой эпитаксии
Физика и техника полупроводников·2020Open Access
Structural and Optoelectron Properties of Hybrid Perovskite Crystals
Optoelectronics Instrumentation and Data Processing·2019
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
Semiconductors·2019· 7 cited
Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates
Semiconductors·2019· 5 cited
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
Semiconductors·2018· 2 cited
Spinodal Decomposition in InSb/AlAs Heterostructures
Semiconductors·2018· 7 cited
Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type
Journal of Applied Physics·2018· 21 cited
Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers
Optoelectronics Instrumentation and Data Processing·2018· 6 cited
Гетероструктуры с InAs/AlAs квантовыми ямами и квантовыми точками, выращенные на гибридных подложках GaAs/Si
Физика и техника полупроводников·2018Open Access
Спинодальный распад в InSb/AlAs-гетероструктурах
Физика и техника полупроводников·2018Open Access
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
Semiconductors·2017· 5 cited
Formation of low-dimensional structures in the InSb/AlAs heterosystem
Semiconductors·2017· 9 cited
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Frequent Co-authors

Т. С. Шамирзаев(25), А. К. Гутаковский(19), М. А. Putyato(16), E. A. Emelyanov(10), М. О. Петрушков(9), B. R. Semyagin(8), В. В. Преображенский(8), A. K. Bakarov(7), A. V. Vasev(6), К. С. Журавлев(5), Д. В. Дмитриев(4), D. A. Kolotovkina(4), Victor V. Atuchin∥⊥(4), A. V. Nenashev(3), O. S. Komkov(3), D. D. Firsov(3), И. Д. Лошкарев(3), В. В. Преображенский(3), D. V. Gulyaev(3), М.А. Путято(3)