Qiuxiang Zhu

Shanghai Center for Brain Science and Brain-Inspired Technology — China

Engineering · Physical Sciences

20h-index1.7kcitations59works17.92yr avg
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Research Topics

Advanced Memory and Neural Computing(18), Ferroelectric and Piezoelectric Materials(17), Multiferroics and related materials(17), Magnetic and transport properties of perovskites and related materials(13), Ferroelectric and Negative Capacitance Devices(11)

Publications59 total

Single-crystal PMN-PT gated ferroelectric field-effect transistor for artificial visual application
Applied Physics Letters·2025
An Organic Ferroelectric Synaptic Transistor
Chinese Physics Letters·2025
In-memory ferroelectric differentiator
Nature Communications·2025· 13 citedOpen Access
A Self-Powered Organic Vision Sensor Array for Photopic Adaptation
Nano Letters·2025· 5 cited
Physical reservoir computing for Edge AI applications
The Innovation Materials·2025· 10 citedOpen Access
Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization
Nature Communications·2024· 19 citedOpen Access
New-Generation Ferroelectric AlScN Materials
Nano-Micro Letters·2024· 67 citedOpen Access
Effects of electrodes on antiferroelectricity and fatigue endurance of Hf0.2Zr0.8O2 thin films
Applied Physics Letters·2024· 5 citedOpen Access
Room-temperature ferroelectricity in magnetically ordered CoH2SeO4 flakes
Science China Materials·2024· 4 citedOpen Access
Synaptic devices with sodium alginate ionic gel gating for global regulation
Journal of Applied Physics·2024· 4 citedOpen Access
A ferroelectric fin diode for robust non-volatile memory
Nature Communications·2024· 70 citedOpen Access
Ferroelectric Polarization Assisted Trapping Memcapacitor
2023· 1 cited
Back Cover: Ultralow‐power in‐memory computing based on ferroelectric memcapacitor network (EXP2 3/2023)
Exploration·2023Open Access
Ultralow‐power in‐memory computing based on ferroelectric memcapacitor network
Exploration·2023· 56 citedOpen Access
Ultrahigh Rectification Ratio in an Asymmetric Metal/Semiconductor/Metal Nanoscale Tunneling Junction: Implications for High-Frequency Rectifiers
ACS Applied Nano Materials·2023· 6 cited
Resistive switching polarity reversal due to ferroelectrically induced phase transition at BiFeO3/Ca0.96Ce0.04MnO3 heterostructures
Applied Physics Letters·2023· 6 cited
Associative learning of a three-terminal memristor network for digits recognition
Science China Information Sciences·2022· 12 cited
Facile preparation of Ti3C2Tx sheets by selectively etching in a H2SO4/H2O2 mixture
Frontiers in Chemistry·2022· 19 citedOpen Access
Ferroelectric polymers for neuromorphic computing
Applied Physics Reviews·2022· 82 cited
Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs
Applied Surface Science·2022· 11 cited
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Frequent Co-authors

Bobo Tian(19), Chun‐Gang Duan(19), Guangdi Feng(12), Junhao Chu(11), Ren‐Kui Zheng(9), Ming Zheng(8), Yu Wang(8), Xiaomin Li(8), Hui Peng(7), Luqiu Chen(7), Chunxiang Xu(6), Brahim Dkhil(6), Shenglan Hao(6), Xiaodong Tang(5), Junfeng Lu(5), Fangyu Yue(5), Xun Shi(5), Mengge Yan(4), Jianlu Wang(4), Feifei Qin(4)