Zihao Xiang

University of Electronic Science and Technology of China — China

Materials Science · Physical Sciences

8h-index165citations11works0.02yr avg
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Research Topics

Transition Metal Oxide Nanomaterials(9), Advanced Memory and Neural Computing(5), Optical Wireless Communication Technologies(5), ZnO doping and properties(2), Quantum Dots Synthesis And Properties(2)

Publications11 total

Optimized thermochromic properties for smart window application of VO2 films by wet-etching process
Optical Materials·2022· 14 cited
Ultra-high phase transition amplitude of Fe-doped high-performance VO2 films manufactured by DC-magnetron sputtering for modulation application
Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021)·2022· 1 cited
Reactive pulsed DC magnetron sputtering deposition of vanadium oxide thin films: Role of pulse frequency on the film growth and properties
Applied Surface Science·2021· 15 cited
Vanadium oxide thin films with extremely narrow thermal hysteresis loop width were obtained by Ta doping for THz modulation applications
Optical Materials·2021· 12 cited
A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity
Nanoscale·2021· 36 cited
Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response
Nanotechnology·2020· 22 cited
Design and preparation of a VO2-based high-performance metamaterial for smart windows
Applied Physics A·2020· 10 cited
Low temperature fabrication of high-performance VO2 film via embedding low vanadium buffer layer
Applied Surface Science·2020· 11 cited
Improvement of phase transition properties of magnetron sputtered W-doped VO2 films by post-annealing approach
Journal of Materials Science Materials in Electronics·2020· 33 cited
Effect of low-valence vanadium buffer layer on the properties of vanadium oxide film
Journal of Materials Science Materials in Electronics·2019· 4 cited
Far-IR transmittance and metal–insulator phase transition properties of VO2 films using Al2O3 as buffer layer
Journal of Materials Science Materials in Electronics·2019· 7 cited

Frequent Co-authors

Zhiming Wu(11), Xiang Dong(11), Yadong Jiang(11), Yuanlin Shi(8), Jun Wang(7), Zhangying Huang(5), Chunhui Ji(5), Jinhong Dai(5), Jun Gou(4), Wen Xu(3), Pengyu Chen(2), Yaming Zhuang(2), Chunyu Li(2), Xuanru Chen(2), Xuefei Wu(2), Fan Zhang(2), Jinquan Wang(1), Jun Yang(1), Miao Shen(1), Dan Wang(1)