Chuanxin Lian

Physics and Astronomy · Physical Sciences

10h-index1.5kcitations24works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(15), Semiconductor Quantum Structures and Devices(10), Semiconductor materials and devices(7), Graphene research and applications(6), Advancements in Semiconductor Devices and Circuit Design(5)

Publications24 total

Scanning Kelvin Probe Microscopic Study of Ni-(Al)GaN and Heterogeneous Integration of GaAs/GaN by Wafer Fusion
Figshare·2022Open Access
Wafer-Fused AlGaAs/GaAs/GaN Heterojunction Bipolar Transistors
Figshare·2022Open Access
Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors
IEEE Transactions on Semiconductor Manufacturing·2016· 6 cited
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
physica status solidi (a)·2011· 92 citedOpen Access
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
physica status solidi (a)·2011· 33 cited
Graphene Transistors
InTech eBooks·2011· 2 citedOpen Access
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
IEEE Electron Device Letters·2010· 155 cited
Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering
IEEE Electron Device Letters·2010· 58 cited
Work-function engineering in novel high Al composition Al<inf>0.72</inf>Ga<inf>0.28</inf>N/AlN/GaN HEMTs
2010· 1 cited
High performance E-mode InAlN/GaN HEMTs: Interface states from subthreshold slopes
2010· 3 cited
Quantum transport in graphene nanoribbons patterned by metal masks
Applied Physics Letters·2010· 50 cited
Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene
Nano Letters·2010· 181 citedOpen Access
Molecular Beam Epitaxy Regrowth of Ohmics in Metal-face AlN/GaN Transistors
2010· 2 cited
仕事関数工学によるAl0.72Ga0.28N/AlN/GaN HEMTにおける閾値電圧制御
IEEE Electron Device Letters·2010· 1 cited
Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010
Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
Science·2009· 793 cited
Quantum transport in patterned graphene nanoribbons
2009· 3 cited
Operation regimes of double gated graphene nanoribbon FETs
2009
Electrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctions
Applied Physics Letters·2008· 31 cited
The role of doping type in setback layers on wafer‐fused AlGaAs/GaAs/GaN HBTs
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008
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Frequent Co-authors

Huili Grace Xing(16), Guowang Li(9), Debdeep Jena(8), Kristof Tahy(6), Yu Cao(6), Xiu Xing(5), Patrick Fay(5), Tom Zimmermann(5), Ronghua Wang(4), P. Saunier(3), Xiang Gao(3), John Simon(2), Vladimir Protasenko(2), Libai Huang(2), Gregory V. Hartland(2), Luxmi(2), R. M. Feenstra(2), Ronghua Wang(2), Gregory L. Snider(2), Debdeep Jena(2)