Ф. Ф. Комаров

Belarusian State University — BY

Engineering · Physical Sciences

27h-index3.3kcitations534works3.42yr avg
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Research Topics

Ion-surface interactions and analysis(177), Silicon and Solar Cell Technologies(96), Metal and Thin Film Mechanics(87), Integrated Circuits and Semiconductor Failure Analysis(74), Silicon Nanostructures and Photoluminescence(73)

Publications532 total

Hardware-intrinsic encrypted imaging and neuromorphic computing enabled by bias-reconfigurable AlScN/GaN heterojunction ultraviolet photodetector
Advanced Photonics·2025· 5 citedOpen Access
2D/3D ZrS3/p-GaN heterostructure photodetector for dual-band and polarization-based optical information encryption
Materials Today Nano·2025
Solar-Blind UV PD Based on the BTO/Al<sub>X</sub>Ga<sub>1-X</sub>N Heterostructure for Imaging and Optical Communication
IEEE Transactions on Electron Devices·2025· 1 cited
Effect of Deposition Modes on Micromechanical Properties of Nanostructured TiAlSiN and TiAlSiCN Coatings
Surface Engineering and Applied Electrochemistry·2025
GaGeTe/GaN Heterostructure-Based Photodetector with Wavelength-Regulated Dual-Function of Optical Imaging and Synapse
ACS Applied Materials & Interfaces·2025· 1 cited
Optoelectronic properties of two-dimensional lead-free perovskite Cs3Sb2I9/InX (X = S, Se) van der Waals heterostructures
Physica E Low-dimensional Systems and Nanostructures·2025· 1 cited
Solar-blind ultraviolet <b> <i>β</i> </b>-Ga2O3 phototransistor for logic and secure optical communication applications
Applied Physics Letters·2025· 4 cited
E-mode p-channel GaN/AlGaN HFETs with κ-Ga2O3 as gate oxide
Optical and Quantum Electronics·2025
Resistive switching mechanisms in memristor structures based on nonstoichiometric silicon nitride layers
Doklady of the National Academy of Sciences of Belarus·2025Open Access
Artificial optoelectronic synapses based on Ga<sub>2</sub>O<sub>3</sub> metal–semiconductor–metal solar‐blind ultraviolet photodetectors with asymmetric electrodes for neuromorphic computing
Responsive materials·2025· 21 citedOpen Access
Self-Powered Photodetectors Based on Ta<sub>2</sub>NiSe<sub>5</sub>/p-GaN Heterostructures for UV Imaging Applications
ACS Applied Electronic Materials·2025· 11 cited
Structural, Optical, and Photoelectric Properties of Silicon Implanted with Indium and Antimony Ions and Subjected to Pulsed Annealing
Journal of Applied Spectroscopy·2025· 1 cited
Polarization enhanced GaN separate absorption and multiplication ultraviolet avalanche photodiodeswith an ScGaN interlayer
Optics Letters·2024· 1 cited
AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure
IEEE Electron Device Letters·2024· 10 cited
Intense violet electroluminescence of thin SiO2 layers with SnO2 nanocrystals
Results in Optics·2024Open Access
FORMING NANOCRYSTALLINE SnO2 FILMS ON SILICON AND SILICON DIOXIDE BY LASER-PLASMA DEPOSITION METHOD
2024
Self-Powered Ga₂O₃ MSM Solar-Blind UV PDs With Asymmetric Electrodes for Optical Communications
IEEE Photonics Technology Letters·2024· 2 cited
Regularities of Obtaining Electrochromic WO3 Films at the Cathode Polarization of the Electrode
Russian Journal of General Chemistry·2024
High-performance transistors based on monolayer all-inorganic two-dimensional halide perovskite Cs2PbI2Cl2 and its optoelectronic application
Journal of Applied Physics·2024· 1 citedOpen Access
Optical and electrophysical properties of nitride TiAlSiN and carbonitride TiAlSiCN coatings: influence of reactive magnetron deposition regimes
Proceedings of the National Academy of Sciences of Belarus Physics and Mathematics Series·2024Open Access
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Frequent Co-authors

Л. А. Власукова(8), M. A. Kumakhov(7), В. М. Береснев(6), W. Wesch(5), П. И. Гайдук(5), С. В. Константинов(5), Д. А. Колесников(5), И. Н. Пархоменко(5), A. F. Burenkov(5), E. Wendler(4), A.D. Pogrebnjak(4), N. A. Makhmudov(4), O. V. Milchanin(4), V. V. Pilko(4), V. S. Tishkov(3), V. S. Baidak(3), M. V. Kaverin(3), Paweł Żukowski(3), A. P. Shpak(3), V. N. Yuvchenko(3)