Xiaolin Wang

Shanghai University — China

Engineering · Physical Sciences

15h-index602citations81works2.52yr avg
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Research Topics

Semiconductor materials and devices(37), Ferroelectric and Negative Capacitance Devices(30), Particle physics theoretical and experimental studies(17), Quantum Chromodynamics and Particle Interactions(16), Advanced Memory and Neural Computing(16)

Publications63 total

Advancing the Frontiers of HfO <sub>2</sub> ‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications
Advanced Materials·2025Open Access
Energy-enhanced aqueous organic flow batteries enabled by integrated proton-coupled electron transfer-induced carbon capture and utilization
2025
RimeSleepNet: A hybrid deep learning network for s-EEG sleep stage classification
Sleep Medicine·2025
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling
IEEE Transactions on Electron Devices·2025
Electrocatalytic reduction of N2 for ammonia synthesis by two-dimensional transition metal N,N′-dicyanoquinonediimine monolayers
Journal of Electroanalytical Chemistry·2025
Solution-Processed In₂O₃ Doped 2-D MoS₂ Thin-Film Transistors With Improvement of Electrical Properties by UV/Ozone Treatment
IEEE Transactions on Device and Materials Reliability·2025· 1 cited
A 19GHz Circular Polarized 256-element CMOS Phased-Array Transmitter with 11W Average Power Consumption for LEO Satellite Terminal
2025
Brain state monitoring and neuromodulation in sleep disorders: current perspectives
The Egyptian Journal of Neurology Psychiatry and Neurosurgery·2025· 1 citedOpen Access
A Generalizable Tri-Layer Design Framework for Enhancing OSFET Reliability
2025· 1 cited
Record-High $\mathbf{Pr}\left(2 \mathbf{Pr}&gt;\mathbf{40} \mu \mathbf{C} / \mathbf{cm}^{2}\right)$ in 3 nm (Physical) Ferroelectric HZO Annealed at $\mathbf{450}^{\circ}\mathbf{C}$: High-T (85 °C) Electrical Cycling and Oxygen Vacancy Engineering
2025· 1 cited
Investigating the Correlation Between Material Ferroelectricity and Silicon-Channel FeFET Performance: Insights for Material Engineering in Device Optimization
IEEE Transactions on Electron Devices·2025· 2 cited
Efficient Large Scale Neural Network Acceleration With 3-D FeNOR-Based Computing-in-Memory Design
IEEE Transactions on Electron Devices·2025· 1 cited
Comprehensive Investigation of Bias Stress-Induced Instabilities in Highly Scaled ZnO FeFETs: Impact of Channel Thickness, Channel Length, and Switching Cycles
IEEE Transactions on Electron Devices·2025· 2 cited
Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism
IEEE Transactions on Electron Devices·2025· 2 cited
Temperature-Dependent Two-Phase Switching of the HfO₂-Based Ferroelectric Polarization
IEEE Transactions on Electron Devices·2025· 1 cited
Optimizing Straw and Manure Co-Substitution Regimes to Maintain Stable Crop Yields Through Enhanced Soil Stoichiometric Balance
Agriculture·2025Open Access
11.1 A 256-Element Ka-Band CMOS Phased-Array Receiver Using Switch-Type Quadrature-Hybrid-First Architecture for Small Satellite Constellations
2025· 2 cited
Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes
IEEE Transactions on Electron Devices·2025· 3 cited
Ferroelectric capacitive memories: devices, arrays, and applications
Nano Convergence·2025· 14 citedOpen Access
Investigating the impact of 3D trench structures on HfO <sub>2</sub> -based ferroelectric capacitors
Nanoscale Advances·2025Open Access
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Frequent Co-authors

Zuopu Zhou(32), Leming Jiao(31), Chen Sun(30), Zijie Zheng(30), Qiwen Kong(30), Xiao Gong(28), Yuye Kang(20), Kaizhen Han(20), Dong Zhang(17), Dong Zhang(16), Gan Liu(13), Gan Liu(13), Kai Ni(12), Gengchiau Liang(12), Long Liu(10), Xiao Gong(10), Bich-Yen Nguyen(7), Yang Feng(7), Haiwen Xu(6), Jiezhi Chen(6)