I. Gyúró

Institute for Technical Physics and Materials Science — Hungary

Physics and Astronomy · Physical Sciences

9h-index321citations55works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(37), Semiconductor materials and devices(13), Advancements in Semiconductor Devices and Circuit Design(12), Semiconductor Lasers and Optical Devices(12), Photonic and Optical Devices(10)

Publications55 total

The "EÖTVÖS” Program in Space Research – 1979-1986
Materials science forum·2010
10 Gb/s Manolithically Integrated Pin-MEMT Receiver OEIC: Realization And Comparison Of Different Circuit Concepts
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics·2005
Dynamic Characteristics of Tb-Dy-Fe Polycrystals with <110> Axial Alignment
Materials science forum·2005· 5 cited
Evidence of oxygen in undoped InAlAs MOVPE layers
2003· 7 cited
On-wafer characterization, modelling, and optimization of InP-based HEMTs, PIN-photodiodes and monolithic receiver-OEICs for fiber-optic communication
2003· 4 cited
Optimization of InAlAs/InGaAs heterostructure field effect transistors for an application in optoelectronic receivers
2003· 1 cited
Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPE
2003· 3 cited
High resolution definition of buried In/sub 0.53/Ga/sub 0.47/As/InP wires by implantation induced intermixing
2003· 1 cited
MOVPE growth of high performance photodetector structures using TBA and TBP
2002· 1 cited
Gain-coupled distributed feedback lasers made by focused ion beam implantation: process parameters and device properties
2002· 1 cited
Integrated high speed pin-diode grown by LP-MOVPE on selectively etched substrates
2002· 3 cited
First order gratings for gain coupled GaInAsP DFB-lasers made by maskless focused ion beam patterning
2002
The sizes of coherent band states in semiconductors, derived from the Franz - Keldysh effect
Journal of Physics Condensed Matter·1996· 9 cited
MOVPE for InP-based optoelectronic device application
III-Vs Review·1996· 4 cited
Correction to "Inhomogeneous Exciton Broadening and Mean Free Path in In/sub 1-x/Ga/sub x/As/sub y/"
IEEE Journal of Selected Topics in Quantum Electronics·1996
Investigations on low-temperature MOVPE growth of InGaAs/InP using alternative sources (TBAs, TBP)
1996
Carrier lifetime in deep-etched<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As/InP quantum wires
Physical review. B, Condensed matter·1995· 12 cited
Gain-modulated second order distributed feedback gratings fabricated by maskless focused ion beam implantation in GaInAsP heterostructures
Microelectronic Engineering·1995· 8 cited
High sensitivity InP-based monolithically integrated pin-HEMT receiver-OEIC's for 10 Gb/s
IEEE Transactions on Microwave Theory and Techniques·1995· 25 cited
Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchange
Journal of Crystal Growth·1995· 7 cited
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Frequent Co-authors

E. Zielinski(21), A. Forchel(20), P. Speier(11), P. Ils(7), Manuela Michel(7), W. Kuebart(7), J.-H. Reemtsma(7), D. Kaiser(7), J. Oshinowo(6), M. Klenk(5), K. Somogyi(5), F. Scheffer(5), H. Großkopf(4), F. Besca(4), T. Görög(4), W. Prost(4), F.‐J. Tegude(4), Monika Emmerling(4), F. Grotjahn(4), E. Lendvay(3)