Qiuhui Li

Minzu University of China — China

Materials Science · Physical Sciences

19h-index1.8kcitations53works8.72yr avg
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Research Topics

2D Materials and Applications(25), Graphene research and applications(18), Advancements in Semiconductor Devices and Circuit Design(12), Nanowire Synthesis and Applications(12), Semiconductor materials and devices(9)

Publications53 total

High-throughput computational screening of two-dimensional oxides for high-performance electronic and optoelectronic devices
Physical Review Applied·2025· 2 cited
CircPTK2 enhances non‐small cell lung cancer proliferation by inhibiting cellular senescence through stabilizing NFYA and elevating FOXM1
British Journal of Pharmacology·2025
Performance limit prediction of atomically thin In2O3 transistors
Science China Information Sciences·2025· 4 cited
<i>Ab-Initio</i> Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe<sub>2</sub> Transistors: Implications for Ultra-Scaled CMOS Technology
ACS Applied Nano Materials·2025· 6 cited
Size- and Configuration-Dependent Photovoltaic Properties in 2d Black Phosphorus Photodetectors: A Quantum Transport Simulation
SSRN Electronic Journal·2025Open Access
Photodetector Based on Elemental Ferroelectric Black Phosphorus-like Bismuth
ACS Applied Materials & Interfaces·2024· 12 cited
Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
arXiv (Cornell University)·2024Open Access
Electrical Contacts in Monolayer MoSi<sub>2</sub>N<sub>4</sub> Transistors
ACS Applied Materials & Interfaces·2024· 6 cited
Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
arXiv (Cornell University)·2024Open Access
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
arXiv (Cornell University)·2024Open Access
Small Cell Lung Cancer—An Update on Chemotherapy Resistance
Current Treatment Options in Oncology·2024· 16 cited
Ballistic 2D MoS2 transistors with ultra-high on-state currents
Science China Materials·2024· 9 cited
Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling
Physical review. B./Physical review. B·2024· 17 cited
Sub-5 nm Ultrathin In<sub>2</sub>O<sub>3</sub> Transistors for High-Performance and Low-Power Electronic Applications
ACS Applied Materials & Interfaces·2024· 3 cited
Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors
arXiv (Cornell University)·2024· 4 citedOpen Access
Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit
Advanced Functional Materials·2024· 65 citedOpen Access
Ohmic-contact ballistic 2D InSe transistors: promising candidates for more Moore electronics
Science China Information Sciences·2024· 7 citedOpen Access
Light-assisted Néel spin currents in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="script">PT</mml:mi></mml:math>-symmetric antiferromagnetic semiconductors
Physical review. B./Physical review. B·2024· 7 cited
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>N</mml:mi></mml:mrow></mml:math>- and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>P</mml:mi></mml:mrow></mml:math>-type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors
Physical Review Materials·2024· 7 cited
Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices
ACS Applied Electronic Materials·2023· 8 cited
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Frequent Co-authors

Jing Lü(34), Shibo Fang(21), Ruge Quhe(20), Jie Yang(17), Chen Yang(14), Linqiang Xu(14), Jinbo Yang(13), Lin Xu(13), Shiqi Liu(12), Xiaotian Sun(11), Jiachen Ma(10), Ying Li(9), Jichao Dong(9), Baochun Wu(9), Zongmeng Yang(8), Ying Guo(7), Yangyang Wang(6), Bowen Shi(6), Lianqiang Xu(6), Linqiang Xu(6)