M. Ishikawa

Engineering · Physical Sciences

8h-index193citations35works0.02yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(24), Semiconductor materials and devices(18), Radio Frequency Integrated Circuit Design(12), Semiconductor Lasers and Optical Devices(9), Photonic and Optical Devices(8)

Publications35 total

Vertical Charge Imbalance Effect on 600V-class Trench-Filling Superjunction Power MOSFETs
2011
The Design Challenge with the Predictable Analysis of the Heat Dissipation and the Electro magnetic Radiation for 10Gbps Pluggable Optical Transceivers
2006
An ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage
2005· 2 cited
A 1.2V 1Mbit embedded MRAM core with folded bit-line array architecture
2004· 19 cited
A GaAs buffering circuit LSI for ultra-fast data processing systems
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988.·2003· 1 cited
0.6 V suppy voltage 0.25 μm E/D-HJFET(IS/sup 3/T) LSI technology for low power consumption and high speed LSIs
2002· 20 cited
A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs
2002· 11 cited
A 27/GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1 μm double-deck-shaped (DDS) gate E/D-HJFETs
2002· 7 cited
A 0.1-μm double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs
2002· 3 cited
An ultra-low-power-consumption high-speed GaAs 256/258 dual-modulus prescaler IC
2002· 5 cited
Ultra low power consumption heterojunction FET 8:1 MUX/1:8 DEMUX for 2.4 Gbps optical fiber communication systems
2002· 4 cited
An 0.1-μm voidless double-deck-shaped (DDS) gate HJFET with reduced gate-fringing-capacitance
IEEE Transactions on Electron Devices·1999· 6 cited
0.21-fJ GaAs DCFL Circuits Using 0.2-ìm Y-Shaped Gate AIGaAs/InGaAs E/D-HJFETs
IEICE Transactions on Electronics·1999
An ultralow-power-consumption, high-speed, GaAs 256/258 dual-modulus prescaler IC
IEEE Journal of Solid-State Circuits·1999· 12 cited
A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's
IEEE Transactions on Very Large Scale Integration (VLSI) Systems·1998· 1 cited
Design of parallel optical higways for interconnecting electronics
1998
An Ultra-low Power-consumption High-speed GaAs 256/258 Dual-modulus Prescaler IC
IEICE technical report. Microwaves·1997
A technique for compensating for temperature variation in low-supply-voltage GaAs DCFL circuits
Solid-State Electronics·1996· 1 cited
A 1. 3 V supply voltage AIGaAs/lnGaAs HJFET SCFL D-FF operating at up to 10 gbps
IEICE Transactions on Electronics·1996
An ultra-low-power-consumption high-speed GaAs quasi-differential switch flip-flop (QD-FF)
IEEE Journal of Solid-State Circuits·1996· 14 cited
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Frequent Co-authors

Masatoshi Tokushima(22), M. Fukaishi(17), Takehiko Maeda(14), Masahiro Fujii(14), H. Hida(12), Yasuo Ohno(12), S. Wada(10), Tadashi Maeda(10), K. Numata(8), J. Yamazaki(6), Keiichi Numata(4), Takashi Furutsuka(3), H. Ishiuchi(2), Tomoharu Tanaka(2), T. Mochizuki(2), O. Ozawa(2), A. Higashisaka(2), Shigeki Wada(2), S. Tanaka(1), Takeshi Tsuji(1)