J. Coutinho

Universidade Federal Fluminense — Brazil

Engineering · Physical Sciences

32h-index3.7kcitations210works0.42yr avg
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Research Topics

Silicon and Solar Cell Technologies(79), Semiconductor materials and devices(76), Semiconductor materials and interfaces(74), Silicon Nanostructures and Photoluminescence(53), Thin-Film Transistor Technologies(30)

Publications210 total

Análise global de doações humanitárias: Um modelo para suporte na alocação de recursos em projetos de redução de riscos de desastres
Anais ... Encontro Nacional de Engenharia de Produção/Anais do Encontro Nacional de Engenharia de Produção·2025Open Access
Deep-level point defects at Ga sites in dilute AlxGa1<b>−</b> <i>x</i>N alloys
Applied Physics Letters·2025Open Access
Dynamic buckling of Si tetramers on the Si(111)-7 × 7 surface
The Journal of Chemical Physics·2025· 1 citedOpen Access
On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
arXiv (Cornell University)·2025Open Access
Driving Tourism Development: Multicriteria Decision-Making in Rio de Janeiro’s Tourism Sector
Springer proceedings in business and economics·2025
Theoretical insights into off-stoichiometric Zr<sub> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mo>(</mml:mo> <mml:mi>x</mml:mi> <mml:mo>)</mml:mo> </mml:mrow> </mml:math> </sub>Ti<sub> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mo>(</mml:mo> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> <mml:mo>)</mml:mo> </mml:mrow> </mml:math> </sub>IrSb half-Heusler alloys: a first principle calculations
Journal of Physics Condensed Matter·2024· 2 cited
ROLE OF PHONON ENTROPY IN FORMATION OF THE 7×7 STRUCTURE ON THE SI(111) SURFACE
2024Open Access
Radiation protection methods for suborbital aircrafts
Journal of Physics Conference Series·2024Open Access
Hydrogen Reactions with Dopants and Impurities in Solar Silicon from First Principles
Solar RRL·2023· 4 citedOpen Access
IMPACT OF STRAIN AND SURFACE RECONSTRUCTION ON LONG-RANGE DIFFUSION OF Ge ATOMS ON Ge(111) SURFACE
2023Open Access
Theory of reactions between hydrogen and group-III acceptors in silicon
Physical review. B./Physical review. B·2023· 6 citedOpen Access
Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptors
Solar Energy Materials and Solar Cells·2023· 6 citedOpen Access
Impact of strain and surface reconstruction on long-range diffusion of Ge atoms on Ge(111) surface
Physical review. B./Physical review. B·2023· 2 citedOpen Access
Deep-level defects in Ga-doped silicon crystals
AIP conference proceedings·2023· 1 cited
Theory of shallow and deep boron defects in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi mathvariant="normal">H</mml:mi></mml:mrow></mml:math>-SiC
Physical review. B./Physical review. B·2022· 15 citedOpen Access
Crucial role of vibrational entropy in the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Si</mml:mi><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mtext>−</mml:mtext><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn></mml:mrow></mml:math> surface structure stability
Physical review. B./Physical review. B·2022· 8 citedOpen Access
Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon
physica status solidi (a)·2022· 4 citedOpen Access
Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles
physica status solidi (b)·2022· 13 citedOpen Access
Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer
Journal of Applied Physics·2021· 7 citedOpen Access
Comment on “Experimental Evidence for a New Two-Dimensional Honeycomb Phase of Silicon: A Missing Link in the Chemistry and Physics of Silicon Surfaces?”
The Journal of Physical Chemistry C·2021· 4 cited
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Frequent Co-authors

R. Jones(14), В. П. Маркевич(14), А. R. Peaker(12), V. J. B. Torres(12), P. R. Briddon(12), Sven Öberg(9), Л. И. Мурин(8), P. R. Briddon(7), Alexandra Carvalho(6), V. S. Bystrov(5), J. L. Lindström(4), Ekaterina Paramonova(4), С. Б. Ластовский(4), L. Dobaczewski(4), B. Hamilton(4), Svitlana Kopyl(3), Marianne Etzelmüller Bathen(3), Lasse Vines(3), Л.И. Мурин(3), M. Bruzzi(3)