Toshiba (Japan) — Japan
Computer Science · Physical Sciences
6h-index264citations14works0.02yr avg
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Research Topics
Advanced Data Storage Technologies(11), Semiconductor materials and devices(9), Cellular Automata and Applications(4), Parallel Computing and Optimization Techniques(3), Advancements in Semiconductor Devices and Circuit Design(2)
Publications14 total
A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory : The Format of Technical Report (Subtitle)
Technical report of IEICE. ICD·2009
2009· 36 cited
IEEE Journal of Solid-State Circuits·2007· 70 cited
A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput
IEICE Technical Report; IEICE Tech. Rep.·2006
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)·2005· 3 cited
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)·2003· 3 cited
IEEE Journal of Solid-State Circuits·2002· 24 cited
ED2000-110 / SDM2000-92 / ICD2000-46 A60ns Access 32kByte Three-Transistor Flash(TTF)for Low Power Embedded Applications
Technical report of IEICE. ICD·2000
Microelectronic Engineering·1999· 2 cited
Frequent Co-authors
Koji Hosono(7), Ken Takeuchi(6), K. Hatakeyama(6), Makoto Iwai(5), T. Himeno(5), K. Kanda(4), Yoshihiko Shindo(4), Naoya Tokiwa(4), K. Imamiya(4), Tamio Ikehashi(4), F. Arai(4), H. Meguro(4), Susumu Fujimura(3), Naoaki Kanagawa(3), M. Kojima(3), Hiroshi Nakamura(3), Hiroyuki Otake(3), M. Shirakawa(3), Masayuki Ichige(3), M. Higashitani(3)