Ang Li

Xidian University — China

Physics and Astronomy · Physical Sciences

11h-index385citations45works2.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(30), Ga2O3 and related materials(21), Semiconductor materials and devices(9), Silicon Carbide Semiconductor Technologies(8), Semiconductor Quantum Structures and Devices(6)

Publications45 total

Etching-free reverse blocking enhancement-mode AlGaN/GaN HEMTs with CuO MOS drain on the Si substrates
Micro and Nanostructures·2025
Investigation for the Temperature Dependence of 2D Electron Gas Behaviors in GaN‐based Multichannel Heterostructures Systems
Advanced Materials Interfaces·2025Open Access
Simulation Study on the Etching Depth of AlGaN/GaN Half-FinFETs
2024
Ultra-Low Gate Leakage Current and Enhanced Gate Reliability in p-GaN HEMT With AlN/GaN/AlN Double Barriers Cap Layer
IEEE Electron Device Letters·2024· 6 cited
Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In<sub>0.1</sub>Al<sub>0.5</sub>Ga<sub>0.4</sub>N Barrier
physica status solidi (a)·2024· 2 cited
Device Model and Energy Loss Mechanism of Enhancement-Mode p-GaN HEMTs Under Unclamped-Inductive-Switching Stress
IEEE Transactions on Electron Devices·2024· 3 cited
Simulation study for anode engineering of AlGaN/GaN double-channel hybrid anode Schottky barrier diode
Micro and Nanostructures·2024· 1 cited
Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors
Journal of Applied Physics·2024· 6 citedOpen Access
Simulation Study of p-GaN HEMT with Gate Floating Metal Rings
2023
Half-FinFET Based on Double-Channel AlGaN/GaN Heterostructure
2023· 1 cited
Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates
physica status solidi (a)·2023
Safety and Efficacy of Spatially Fractionated Radiation Therapy Using Lattice Radiation for Metastatic and/or Bulky Disease
International Journal of Radiation Oncology*Biology*Physics·2023Open Access
Evaluation by Simulation of Quasi-vertical GaN Schottky Barrier Diode With Trench Floating Metal Rings
2023
A Simulation Study of Multi-Channel AlInN/GaN Schottky Barrier Diodes and Experimental Comparison with Low On-resistance of 1.9 Ω•mm
2023
Study on High-Linearity Devices Based on Double-Channel AlGaN/GaN FinFET Structure
2023· 1 cited
A new lateral AlGaN/GaN Schottky barrier diode combining with floating metal rings and P-guard rings for high breakdown voltage
2023· 1 cited
Corrigendum: The influence of lightly-doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT (2022 <i>Semicond. Sci. Technol.</i> 37 075005)
Semiconductor Science and Technology·2022Open Access
Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance
physica status solidi (a)·2022· 3 cited
On the DLM/FD methods for simulating neutrally buoyant swimmers moving in non‐Newtonian shear thinning fluids
International Journal for Numerical Methods in Fluids·2022
The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT
Semiconductor Science and Technology·2022· 22 cited
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Frequent Co-authors

Xuefeng Zheng(24), Xiaohua Ma(24), Yaopeng Zhao(22), Chong Wang(22), Yue Hao(16), Kai Liu(15), Kai Liu(12), Yunlong He(11), Yue Hao(9), Ping Wang(6), Wei Mao(6), Chong Wang(6), Yunlong He(6), Chunfu Zhang(5), Lixin Guo(5), Junchun Bai(4), Kuo Zhang(4), Wentao Zhang(4), Qian Feng(3), Zhuangzhuang Hu(3)