Lianjun Wen

Chongqing University — China

Engineering · Physical Sciences

7h-index246citations40works3.62yr avg
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Research Topics

Nanowire Synthesis and Applications(22), Semiconductor Quantum Structures and Devices(14), Advancements in Semiconductor Devices and Circuit Design(13), Electronic and Structural Properties of Oxides(8), Quantum and electron transport phenomena(7)

Publications40 total

Catalyst-free in-plane growth of high-quality ultra-thin InSb nanowires
Applied Physics Letters·2024· 6 cited
Metal-sown selective area growth of high crystalline quality InAsSb nanowires and networks by molecular-beam epitaxy
Materials Today Nano·2024· 1 cited
Synthesis and optical properties of high-quality ultrathin homogeneous GaAs1−xSbx nanowires
Science China Physics Mechanics and Astronomy·2024· 3 cited
Embedded high-quality ternary GaAs<sub>1−x </sub>Sb<sub> x </sub> quantum dots in GaAs nanowires by molecular-beam epitaxy
Journal of Semiconductors·2024· 5 cited
Enhanced interlayer Dzyaloshinskii–Moriya interaction and field-free switching in magnetic trilayers with orthogonal magnetization
APL Materials·2024· 6 citedOpen Access
In‐Plane Selective Area Epitaxy of InAsSb Nanowire Networks for High‐Performance Scalable Infrared Photodetectors
Advanced Optical Materials·2024· 7 citedOpen Access
Microstructure and magnetic properties of the ferromagnetic semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ge</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Mn</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math> following rapid thermal annealing
Physical review. B./Physical review. B·2024· 1 cited
Metal-Sown Selective Area Growth of High Crystalline Quality Inassb Nanowires and Networks by Molecular-Beam Epitaxy
SSRN Electronic Journal·2024Open Access
<i>In situ</i> tuning of dynamical Coulomb blockade on Andreev bound states in hybrid nanowire devices
Physical review. B./Physical review. B·2023· 2 cited
Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy
Nanotechnology·2023· 7 citedOpen Access
High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation
Nanotechnology·2023· 4 citedOpen Access
Large Andreev bound state zero-bias peaks in a weakly dissipative environment
Physical review. B./Physical review. B·2022· 12 cited
In situ tuning of dynamical Coulomb blockade in hybrid nanowire devices
2022· 2 citedOpen Access
In situ tuning of dynamical Coulomb blockade in hybrid nanowire devices
Zenodo (CERN European Organization for Nuclear Research)·2022Open Access
In situ tuning of dynamical Coulomb blockade on Andreev bound states in hybrid nanowire devices
arXiv (Cornell University)·2022Open Access
Plateau Regions for Zero-Bias Peaks within 5% of the Quantized Conductance Value <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:msup><mml:mi>e</mml:mi><mml:mn>2</mml:mn></mml:msup><mml:mo>/</mml:mo><mml:mi>h</mml:mi></mml:math>
Physical Review Letters·2022· 51 citedOpen Access
Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device
Physical Review Research·2022· 45 citedOpen Access
Observation of plateau regions for zero bias peaks within 5% of the quantized conductance value 2e2/h
Zenodo (CERN European Organization for Nuclear Research)·2022· 1 citedOpen Access
Observation of plateau regions for zero bias peaks within 5% of the quantized conductance value 2e2/h
Zenodo (CERN European Organization for Nuclear Research)·2022Open Access
In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices
Chinese Physics Letters·2022· 36 citedOpen Access
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Frequent Co-authors

Ran Zhuo(33), Jianhua Zhao(28), Dong Pan(23), Runan Shang(22), Lei Liu(21), Dunyuan Liao(20), Dong E. Liu(18), Zhan Cao(14), Hao Zhang(14), Gu Zhang(13), Huading Song(12), Donghao Liu(11), Dong Pan(9), Zhaoyu Wang(8), Zitong Zhang(8), Shan Zhang(8), Zhichuan Wang(8), Zonglin Li(7), Fengyue He(6), Xiyu Hou(6)