Abhinav Gupta

Engineering · Physical Sciences

12h-index924citations50works1.92yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(41), Semiconductor materials and devices(38), Silicon Carbide Semiconductor Technologies(16), Integrated Circuits and Semiconductor Failure Analysis(9), Nanowire Synthesis and Applications(7)

Publications50 total

Performance improvement of junctionless gate all around (JL-GAA) MOSFETs with recessed drain/source (Re-D/S)
International Journal of Electronics·2026· 1 cited
A High Sensitivity Novel Gas Sensor for Ethanol Sensing Using Gate Stack Junction-less Gate-All-Around (GS-JL-GAA) MOSFET for Industrial Application
2025Open Access
Impact of Fringing Fields on Electrostatic and Analog/Radio Frequency Performance of Graded Channel Junctionless Gate-All-Around Metal Oxide Field Effect Transistor
Semiconductors·2025
Blockchain-Based Certification System: The prospect of revolutionizing Credential Verification
2025
Noise Performance Evaluation of Recessed-Drain/Source Junctionless Gate-All-Around MOSFETs
Journal of Electronic Materials·2025· 5 cited
Thermal analysis of analog and noise parameters of dual material recessed source-drain junctionless gate all around MOSFETs
International Journal of Electronics·2025· 5 cited
Design and Study of Source Pocket Extended Gate Vertical TFET
2024· 2 cited
Thermal analysis of Recessed Source/Drain Junctionless MOSFET with Enhanced Electrostatic Performance
2024
Performance investigation of Nano-wire Biosensor using Junction-less Gate-All-Around MOSFET
2024
Impact of process parameters variation on noise and linearity performances of GC-JL-GAA MOSFET
International Journal of Electronics·2024· 5 cited
Big Data and Bigger Firms: A Labor Market Channel
SSRN Electronic Journal·2024· 3 citedOpen Access
Noise and linearity analysis of recessed-source/drain junctionless Gate All Around (Re-S/D-JL-GAA) MOSFETs for communication systems
Microelectronics Journal·2023· 14 cited
The Investigation of Gate Oxide and Temperature Changes on Electrostatic and Analog/RF and Behaviour of Nanotube Junctionless Double-Gate-All Around (NJL-DGAA) MOSFETs using Si Nano-materials
Silicon·2023· 2 cited
Impact of temperature variation on noise parameters and HCI degradation of Recessed Source/Drain Junctionless Gate All Around MOSFETs
Microelectronics Journal·2023· 22 cited
DEEP LEARNING FRAMEWORK FOR POST-HAZARD CONDITION MONITORING OF NUCLEAR SAFETY SYSTEMS
Proceedings of the 13th International Workshop on Structural Health Monitoring·2022· 6 cited
A Novel Technique to Investigate the Impact of Temperature and Process Parameters on Electrostatic and Analog/RF Performance of Channel Modulated Junctionless Gate-all-around (CM-JL-GAA) MOSFET
Silicon·2022· 6 cited
Linearity Distortion & Thermal Stability Analysis of Negative Capacitance based Cylindrical Junction-less Transistors (NC-CyJLT)
Silicon·2022· 4 cited
Performance Enhancement of SiGe-Based Junctionless Tri-Gate (JL-TG) FinFETs Using Hetero-High-K Gate Oxide Material
Lecture notes in electrical engineering·2022
Investigation of Analog Performance of In0.53Ga0.47As-Based Nanotube Double-Gate-All-Around (DGAA) MOSFET
Lecture notes in electrical engineering·2021
Thermal Stability Analysis of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFET for Analog Application
Lecture notes in electrical engineering·2021· 1 cited
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Frequent Co-authors

Sanjeev Rai(20), Tarun Kumar Gupta(10), Himanshi Awasthi(9), Nitish Kumar(8), Alok Kumar(7), Vidyadhar Gupta(7), Manish Kumar(6), Amrish Kumar(6), Amit Kumar Pandey(6), Vaibhav Purwar(5), Elad Alon(4), Digvijay Pandey(4), Bhavana P. Shrivastava(3), Amit Kumar Pandey(3), Vikrant Varshney(3), Chintan Thakkar(2), Matthew Spencer(2), Fred K. Chen(2), Rhesa Nathanael(2), Hossein Fariborzi(2)