Yi-Ting Cheng

National Taiwan University — Taiwan

Engineering · Physical Sciences

9h-index275citations51works0.62yr avg
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Research Topics

Semiconductor materials and devices(31), Advancements in Semiconductor Devices and Circuit Design(14), Semiconductor materials and interfaces(14), Silicon Nanostructures and Photoluminescence(6), Electronic and Structural Properties of Oxides(6)

Publications51 total

In <i>situ</i> Al2O3 passivation of epitaxial tantalum and aluminum films enables long-term stability in superconducting microwave resonators
APL Quantum·2026Open Access
Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits
ArXiv.org·2026Open Access
Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits
arXiv (Cornell University)·2026Open Access
In situ Al$_2$O$_3$ passivation of epitaxial tantalum and aluminum films enables long-term stability in superconducting microwave resonators
arXiv (Cornell University)·2025Open Access
Insight into crystalline, electronic, and mechanical characteristics of calcium sulfate minerals based on density functional theory
Journal of Physics Conference Series·2025· 1 citedOpen Access
Transformer-Based Latency Compensation for Cooperative Perception
2025
Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications
APL Electronic Devices·2025Open Access
Electron spectroscopy study of single-crystal CrTe
Physical review. B./Physical review. B·2025· 2 cited
Effective passivation of <i>p-</i> and <i>n-</i>type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps
Journal of Applied Physics·2024· 2 cited
GaAs MOSFETs with in situ Y<sub>2</sub>O<sub>3</sub> dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation
Japanese Journal of Applied Physics·2023· 1 citedOpen Access
Low D<sub>it</sub> of $(2-4)\times 10^{10}$ using Y<sub>2</sub>O<sub>3</sub>/epi-Si/Ge Gate Stacks
2023
Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y<sub>2</sub>O<sub>3</sub>gate dielectric for cryogenic electronics
2023
Interface tailoring for CMOS, cryogenic electronics, and beyond
2023
Preparing Silver–Copper pastes in accordance with percolation theory for die attach bonding
Materials Chemistry and Physics·2023· 9 cited
Gaas Mosfets with In-Situ Y2o3 Dielectric: Attainment of Nearly Thermally Limited Subthreshold Slope and Enhanced Drain Currents Via Accumulation
SSRN Electronic Journal·2023Open Access
Perfecting high-κ/Ge and /InGaAs interfaces – push for ultimate CMOS and emerging cryogenic electronic devices
2022 IEEE 16th International Conference on Solid-State &amp; Integrated Circuit Technology (ICSICT)·2022
(Invited) Thin Epitaxial Single-Crystal Si on Sige Followed By in-Situ Deposition of High-k Dielectrics – Novel Gate Stacks for Achieving Extremely Low D<sub>it</sub> and Highly Reliable SiGe MOS
ECS Meeting Abstracts·2022
Microscopic Views of Ge Segregation and Scavenging Ge on Thin Si on Epi-Ge(001)
ECS Meeting Abstracts·2022
High-Ge-Content Si<sub>1<i>–x</i></sub>Ge<sub><i>x</i></sub> Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability
ACS Applied Electronic Materials·2022· 2 cited
A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
Nanomaterials·2022· 3 citedOpen Access
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Frequent Co-authors

Hsien-Wen Wan(36), J. Kwo(33), M. Hong(26), Y.H. Lin(18), Tun‐Wen Pi(17), L. Young(12), Chiu-Ping Cheng(12), C. K. Cheng(8), Keng-Yung Lin(6), T.-W. Pi(6), Wan-Sin Chen(6), Minghwei Hong(6), J. Liu(5), Tien-Yu Chu(5), Yujie Hong(4), Chia‐Hung Hsu(4), Chien-Ting Wu(4), Chao-Kai Cheng(4), Wen‐Shan Chen(3), Kuan-Hui Lai(3)