Hang Zhou

China Academy of Engineering Physics — China

Engineering · Physical Sciences

8h-index206citations38works8.12yr avg
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Research Topics

Semiconductor materials and devices(21), Radiation Effects in Electronics(13), Advancements in Semiconductor Devices and Circuit Design(12), Silicon and Solar Cell Technologies(8), Integrated Circuits and Semiconductor Failure Analysis(7)

Publications38 total

First-Principles Study on the Evolution and Annealing of Hydrogen Bridge Defects at the a-SiO2/Si(100) Interface
2026Open Access
First-principles study of hydrogen bridge defects at amorphous-SiO2/Si (100) interface: Structural dynamics and non-radiative carrier capture
Computational Materials Science·2025· 2 cited
Phosphorylation of H3.3 at Serine 31 acts as a switch of nucleosome dynamics for transcription
Nucleic Acids Research·2025· 3 citedOpen Access
First-Principles Study of Hydrogen-Related Defects at a-SiO2/Si(100) Interfaces: Charge Transition Levels and Formation Energies
SSRN Electronic Journal·2025Open Access
First-Principles Study of Hydrogen-Related Defects at a-SiO2/Si(100) Interfaces: Charge Transition Levels and Formation Energies
SSRN Electronic Journal·2025Open Access
First-Principles Study of the Formation and Annealing Behavior of Hydrogen-Related Defects at the a-SiO2/Si(100) Interface
SSRN Electronic Journal·2025Open Access
First-Principles Study of Hydrogen-Related Defects at A-Sio2/Si(100) Interfaces: Charge Transition Levels and Formation Energies
SSRN Electronic Journal·2025Open Access
Gamma‐Ray‐Induced Photoelectric Field Exacerbating Irradiation Damage in Ceramic Capacitors
physica status solidi (a)·2024Open Access
In-circuit irradiation effect test of electronic components using transient high dose rate X-ray source at high power laser facility
2024
Gamma-Ray Irradiation Induced Dielectric Loss of SiO<sub>2</sub>/Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps
ACS Applied Electronic Materials·2024· 26 cited
Electronic properties of ionizing radiation-induced defects at SiO$$_2$$/Si interface associated with non-trivial excess current splitting
The European Physical Journal Plus·2024· 57 cited
Over 18.7% efficiency for bulk heterojunction and pseudo-planar heterojunction organic solar cells achieved by regulating intermolecular compatibility
Journal of Materials Chemistry A·2024· 9 cited
Design of In-Situ Optical Fiber Sensor for Dissolved Oxygen and Chlorophyll-a in Ocean
2023· 2 cited
Research on Design Technology of Piezoelectric Hydrophone Based on Micro Additive Manufacturing
2023
Design and Research of an Oil - Water Detector with Array Electrode
2023· 1 cited
Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors
ACS Applied Electronic Materials·2023· 3 cited
Research and Design of Dual-Excitation Nine-Electrode Conductivity Sensor
2023· 4 cited
Near-diffraction-limited 201 W high-repetition-rate Yb:YAG regenerative thin-disk amplifier
Infrared Physics & Technology·2023· 6 cited
Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors
Journal of Materials Science Materials in Electronics·2023· 1 cited
First principle studies on properties of silicon-vacancy related defects in amorphous silica
Journal of Non-Crystalline Solids·2022· 10 cited
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Frequent Co-authors

Yu Song(14), Yang Liu(11), Xu Zuo(8), Ying Zhang(8), Su‐Huai Wei(7), Guanghui Zhang(5), Dechao Meng(5), Jie Zhao(5), Qi Di(5), Hong Luo(5), Zeng-hui Yang(4), Gang Dai(4), Yang Liu(4), Le Zhong(3), Wenguang Zhao(3), Hongquan Zhang(3), Lidong Zhang(3), Shiyi Zhou(3), Shun Li(3), Jian Zhang(3)