Hyo‐Shin Ahn

Samsung (South Korea) — South Korea

Engineering · Physical Sciences

12h-index1.3kcitations20works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(6), Electronic and Structural Properties of Oxides(6), Advancements in Semiconductor Devices and Circuit Design(4), Metal and Thin Film Mechanics(3), Carbon Nanotubes in Composites(2)

Publications20 total

An effective grain growth model using a combination of Voronoi tessellation and Monte Carlo method
2023
Full Chip Stress Model for Flash BEOL Crack Failure Risk Analysis
2023· 2 cited
EUV-induced activation mechanism of photoacid generators: key factors affecting EUV sensitivity
2023· 3 cited
First-principles study of dopant trap level and concentration in Si(110)/a-SiO<sub>2</sub> interface
2020· 1 cited
Multi-domain process modeling for advanced logic and memory devices: from equimpments to materials
2018
Phase stability and electronic structures of stoichiometric tantalum mononitrides
Computational Materials Science·2008· 18 cited
Interaction and ordering of vacancy defects in NiO
Physical Review B·2008· 154 cited
Molecular dynamics study on low-energy sputtering properties of MgO surfaces
Journal of Applied Physics·2008· 15 cited
Al‐Doped TiO<sub>2</sub> Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
Advanced Materials·2008· 317 cited
Pairing of cation vacancies and gap-state creation in TiO2 and HfO2
Applied Physics Letters·2007· 25 cited
Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability
Applied Physics Letters·2007· 61 cited
First-principles study on secondary electron emission of MgO surface
Journal of Applied Physics·2007· 24 cited
Publisher’s Note: Oxygen Vacancy Clustering and Electron Localization in Oxygen-Deficient<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>LDA</mml:mi><mml:mo>+</mml:mo><mml:mi>U</mml:mi></mml:math>Study [Phys. Rev. Lett.<b>98</b>, 115503 (2007)]
Physical Review Letters·2007· 4 citedOpen Access
Oxygen Vacancy Clustering and Electron Localization in Oxygen-Deficient<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>LDA</mml:mi><mml:mo>+</mml:mo><mml:mi>U</mml:mi></mml:math>Study
Physical Review Letters·2007· 297 cited
First-principles study of point defects in rutile<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mrow><mml:mn>2</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>
Physical Review B·2006· 221 cited
Field emission of doped carbon nanotubes
Applied Physics Letters·2006· 45 cited
<i>Ab initio</i>study of the effect of nitrogen on carbon nanotube growth
Nanotechnology·2006· 13 cited
LDA+U study on fully relaxed LaTiO 3 and (SrTiO 3) m(LaTiO 3) n superlattice structures
Journal of the Korean Physical Society·2006· 11 cited
Unusual stress behavior in W-incorporated hydrogenated amorphous carbon films
Applied Physics Letters·2005· 47 cited
Residual stress jumping with W concentration in the WC - C nanocomposite films
한국진공학회 학술발표회초록집·2004

Frequent Co-authors

Seungwu Han(12), Kwang‐Ryeol Lee(5), Inkook Jang(5), Cheol Seong Hwang(4), Eunae Cho(4), Dae Sin Kim(4), Jaichan Lee(3), Seong Keun Kim(2), Do Duc Cuong(2), Bora Lee(2), Kyeong Mi Choi(2), Choong‐Ki Lee(2), Aiying Wang(2), Doh-Yeon Kim(2), Youngmi Cho(2), Changwook Kim(2), Taeeun Kim(2), Won‐Joon Son(2), Alexander Schmidt(2), Gijae Kang(2)