Jaeyong Jeong

Korea Advanced Institute of Science and Technology — South Korea

Engineering · Physical Sciences

15h-index633citations74works3.92yr avg
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Research Topics

Semiconductor materials and devices(26), 3D IC and TSV technologies(13), Advancements in Semiconductor Devices and Circuit Design(12), Advanced Data Storage Technologies(12), Ferroelectric and Negative Capacitance Devices(10)

Publications74 total

Heterogeneous 3D Integration of Low-Voltage E/D-Mode GaN HEMTs on CMOS Chip for Efficient On-Chip Voltage Regulation in Active Power Delivery Networks
2025· 1 cited
High-Performance Monolithic 3D Integrated Red μLEDoS Display for AR/VR
2025
Heterogeneous 3-D Sequential CFET With Strain-Engineered Ge (100) Top-Channel pMOSFET on Bulk Si (100) nMOSFET
IEEE Transactions on Electron Devices·2025· 2 cited
Heterogeneous and Monolithic 3D Integrated Full‐Color Micro‐Light‐Emitting Diodes via CMOS‐Compatible Oxide Bonding for µLEDoS
Laser & Photonics Review·2025· 3 citedOpen Access
3-D On-Chip Integration of GaN Power Devices on Power Delivery Network (PDN) With Direct Heat Spreading Layer Bonding for Heterogeneous 3-D (H3D) Stacked Systems
IEEE Transactions on Electron Devices·2025· 1 cited
Monolithic 3D Oscillatory Ising Machine Using Reconfigurable FeFET Routing for Large‐Scalability and Low‐Power Consumption
Advanced Science·2025· 2 citedOpen Access
Heterogeneous and Monolithic 3D (HM3D) Integration of III-V and CMOS for Next-Generation Wireless Communications
2025
High-performance InGaAs HEMTs on GaAs substrate using AlAs/GaAs superlattice buffer-assisted heterostructure growth
Journal of Alloys and Compounds·2025· 5 cited
Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms
Nature Communications·2024· 10 citedOpen Access
Vertically Integrated Active Power Delivery Network (PDN) for Heterogenous 3D (H3D) Stacked Systems: 3D On-Chip Integration of GaN Power Devices on PDN with Direct Heat Spreading Layer Bonding
2024· 6 cited
Heterogeneous and Monolithic 3D (HM3D) Integrated RF Circuits: HM3D Integration of InGaAs HEMTs on CMOS-Based Backside Passive Devices
2024· 1 cited
(Invited) Heterogeneous 3D CFET with Ge Nanosheet Channel
ECS Meeting Abstracts·2024
Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors
Light Science & Applications·2024· 34 citedOpen Access
NORNS: Three Guides for Efficient Automatic Post-Fabrication Optimization of Modern NAND Flash Memory
2024Open Access
Silicon-based integrated passive device stack for III-V/Si monolithic 3D circuits operating on RF band
Solid-State Electronics·2024· 2 cited
BEOL‐Compatible 4F<sup>2</sup> Oscillator Using Vertical InGaAs Biristor for Highly Scalable Monolithic 3D Ising Solver
Small·2024Open Access
First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication
2024· 2 cited
Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion
IEEE Transactions on Electron Devices·2024· 8 cited
Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications
arXiv (Cornell University)·2024Open Access
A Valid Experimental Design of the Lifetime Prediction for NAND Cell Oxide
2024· 1 cited
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Frequent Co-authors

Sanghyeon Kim(31), Seong Kwang Kim(24), Dae‐Myeong Geum(22), Bong Ho Kim(19), Joon Pyo Kim(17), Jongmin Kim(16), Yoon‐Je Suh(14), Juhyuk Park(10), Joonsup Shim(8), Jihong Kim(7), Song‐Hyeon Kuk(7), Jinha Lim(5), C. Lee(5), Ji-Sung Lee(5), Nahyun Rheem(5), Sungjin Lee(4), Youngsun Song(4), Seung‐Yeop Ahn(4), Seung‐Young Park(4), Sangwook Shane Hahn(3)