Wenlong Cai

Zhejiang International Studies University — China

Physics and Astronomy · Physical Sciences

19h-index1.9kcitations62works1.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Magnetic properties of thin films(41), Advanced Memory and Neural Computing(32), Ferroelectric and Negative Capacitance Devices(18), Magnetic and transport properties of perovskites and related materials(10), Physics of Superconductivity and Magnetism(7)

Publications62 total

Single femtosecond laser pulse-driven ferromagnetic switching
arXiv (Cornell University)·2025Open Access
Radiofrequency Spintronic Neural Network Enabled by Electrically Modulated Magnetic Tunnel Junctions
Advanced Materials·2025
Giant Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction
Nature Communications·2025· 2 citedOpen Access
Experiment Demonstration of Novel Strong PUF With SOT P-Bit as Dynamic Entropy Source
IEEE Transactions on Electron Devices·2025
Top Spin-Orbit-Torque Switching of Magnetic Tunnel Junction With In-Situ Efficiency Quantification
IEEE Electron Device Letters·2025· 1 cited
Thermally Driven Leaky-Integrate-and-Fire Spintronic Neurons With Stray-Field-Enabled Self-Reset for Neuromorphic Computing
IEEE Electron Device Letters·2025· 2 cited
Time-resolved nanosecond magnetization switching induced by spin-transfer torque for cryogenic memories
Applied Physics Letters·2025
Successive Probability Approach for 1-Bit Quantization Ising Computer Demonstrated With 8×2 Spin Orbit Torque P-Bits Array
IEEE Transactions on Electron Devices·2025· 1 cited
Observation of anomalous Hall effect in Mn3GaN p-wave magnet
2025Open Access
Current-induced Néel order switching in a W/IrMn heterostructure
Physical review. B./Physical review. B·2025· 1 cited
Giant Orbital Torque-driven Picosecond Switching in Magnetic Tunnel Junctions
arXiv (Cornell University)·2025· 1 citedOpen Access
Experimental Realization of Physical Unclonable Function Chip Utilizing Spintronic Memories
Engineering·2025· 4 citedOpen Access
Biomimetic Colored Coating toward Robust Display under Hostile Conditions
ACS Applied Materials & Interfaces·2024· 2 cited
Erratum — Magnetization Switching in Atom-Thick Mo Engineered Exchange Bias-Based SOT-MRAM
SPIN·2024
NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications
arXiv (Cornell University)·2024Open Access
Compact leak-integrate-fire neuron with auto-reset functionality based on a single spin–orbit torque magnetic tunnel junction device
Applied Physics Letters·2024· 2 citedOpen Access
Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure
arXiv (Cornell University)·2023· 1 citedOpen Access
Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction
arXiv (Cornell University)·2023· 3 citedOpen Access
Optimal Design of the Nonlinear Inductor for MLCL-Filtered Grid-Connected PV Inverter
2023
Magnetization Switching in Atom-Thick Mo Engineered Exchange Bias-Based SOT-MRAM
SPIN·2023
page 1 of 4Next →

Frequent Co-authors

Weisheng Zhao(46), Kaihua Cao(30), Daoqian Zhu(24), Kewen Shi(21), Jialiang Yin(13), Ao Du(12), Zhaohao Wang(10), Xueying Zhang(10), Mengxing Wang(9), Zongxia Guo(9), Yan Huang(9), A. Fert(8), Youguang Zhang(7), Shouzhong Peng(7), Houyi Cheng(7), Zilu Wang(6), Shiyang Lu(6), Yue Zhang(6), Huaiwen Yang(6), Chao Zhao(6)