W. A. Bonner

Physics and Astronomy · Physical Sciences

35h-index4.1kcitations126works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(51), Physics of Superconductivity and Magnetism(22), Semiconductor materials and devices(20), Semiconductor materials and interfaces(20), Semiconductor Lasers and Optical Devices(16)

Publications126 total

Pillars article: cell sorting: automated separation of Mammalian cells as a function of intracellular fluorescence. Science. 1969. 166: 747-749.
PubMed·2014· 7 cited
Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station
Journal of Crystal Growth·2007· 18 cited
Reproducible Crystal Growth Experiments in Microgravity Science Glovebox at the International Space Station (SUBSA Investigation)
NASA Technical Reports Server (NASA)·2005
Te-and Zn-Doped InSb Crystals Grown in Microgravity
NASA Technical Reports Server (NASA)·2004
Solidification Using the Baffle in Sealed Ampoules
NASA Technical Reports Server (NASA)·2003
1.14 μm strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition
2002
Bulk ternary indium phosphide arsenide, InP/sub 1-x/As/sub x/: growth and characterization
2002
Bulk Ternary Semiconducting Compounds
Elsevier eBooks·2001
Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD
IEEE Photonics Technology Letters·1998· 5 cited
Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition
IEEE Photonics Technology Letters·1997· 3 cited
AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates
Journal of Applied Physics·1997· 4 cited
Cellular structure in LEC ternary Ga1 − xInxAs crystals
Journal of Crystal Growth·1997· 6 cited
Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates
Journal of Applied Physics·1997· 14 cited
Fabrication of high power InGaAs/AlInGaAs strainedSQW lasers on InGaAs ternary substrates
Electronics Letters·1996· 4 cited
1.75-µm strained InGaAs multiplex-quantum-well laser grown on an InAs 0.08 P 0.92 ternary substrate
Conference on Lasers and Electro-Optics·1995
InGaAs/GaAs multiple strained-layer structure grown on a lattice-matched InGaAs substrate wafer
Applied Physics Letters·1995· 4 cited
Initial results for InGaAs films grown on InGaAs substrates
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1995· 2 cited
1.75 µm strained InGaAs multiquantumwell laser grown on InAs <sub>0.08</sub> P <sub>0.92</sub> ternary substrate
Electronics Letters·1995· 7 cited
Electro-optic potassium-tantalate-niobate films prepared by pulsed laser deposition from segmented pellets
Journal of materials research/Pratt's guide to venture capital sources·1994· 6 cited
Selective OMVPE of GaInAs and InP using a polycrystalline InP mask
Journal of Crystal Growth·1991· 6 cited
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Frequent Co-authors

L. G. Van Uitert(9), H. Temkin(7), P. A. Morris(6), N. G. Stoffel(6), M. Onellion(5), G. Margaritondo(5), Jean‐Marie Tarascon(4), Ming Tang(4), Y. A. Chang(4), B. V. Dutt(3), Albert Chin(3), H. R. Hulett(2), Adam Heller(2), M. K. Kelly(2), Patricia A. Morris(2), J. J. Rubin(2), V. G. Keramidas(2), K. Y. Cheng(2), A. Y. Cho(2), S. Mahajan(2)