J. F. Schetzina

Engineering · Physical Sciences

39h-index5.4kcitations259works0.02yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Advanced Semiconductor Detectors and Materials(140), Semiconductor Quantum Structures and Devices(127), Chalcogenide Semiconductor Thin Films(103), Quantum Dots Synthesis And Properties(67), GaN-based semiconductor devices and materials(52)

Publications259 total

Materials for Infrared Detectors and Sources
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2014· 43 cited
High-brightness green light-emitting diodes
2005
Blue/green Lasers Based On II-VI Semiconductor Heterostructures
2005
High-brightness light-emitting diodes grown by MBE on ZnSe substrates
2002· 1 cited
MBE growth of GaN
2002
Ohmic contacts on <i>n</i> -type Al <sub>0.59</sub> Ga <sub>0.41</sub> N for solar blind detectors
Electronics Letters·2002· 13 cited
UV detectors and focal plane array imagerss based on AlGaN p-i-n photodiodes
Opto-Electronics Review·2002· 2 cited
New UV Light Emitter Based on AlGaN Heterostructures with Graded Electron and Hole Injectors
MRS Proceedings·2002· 3 cited
Photoemission spectromicroscopy studies on ELO GaN surfaces
APS March Meeting Abstracts·2001
High resolution photoemission observation of AlGaN
APS March Meeting Abstracts·2000
Solar-Blind AlGaN Heterostructure Photodiodes
MRS Internet Journal of Nitride Semiconductor Research·2000· 51 citedOpen Access
UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
MRS Internet Journal of Nitride Semiconductor Research·2000· 38 citedOpen Access
High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
MRS Internet Journal of Nitride Semiconductor Research·2000· 4 citedOpen Access
Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2
Applied Physics Letters·1999· 47 cited
Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1999· 3 cited
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride
Journal of Electronic Materials·1999· 6 cited
Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy
Journal of Electronic Materials·1999· 14 cited
Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys
MRS Internet Journal of Nitride Semiconductor Research·1999· 166 cited
Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes
MRS Internet Journal of Nitride Semiconductor Research·1999· 60 citedOpen Access
High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
MRS Proceedings·1999· 3 cited
page 1 of 13Next →

Frequent Co-authors

J. W. Cook(18), R. N. Bicknell(16), N. C. Giles(9), Mark A. Johnson(8), T. H. Myers(8), D. K. Blanks(7), W. C. Hughes(6), J. A. Edmond(6), J.D. Brown(6), Karen Bowers(5), N. C. Giles‐Taylor(5), W. H. Rowland(4), Zhonghai Yu(4), R. W. Yanka(4), R. P. Vaudo(4), K. A. Harris(4), Shizυo Fujita(3), James Cook(3), R. M. Kolbas(3), N. Ōtsuka(3)