Karl Hofmann

Engineering · Physical Sciences

13h-index627citations41works52.52yr avg
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Research Topics

Semiconductor materials and devices(30), Advancements in Semiconductor Devices and Circuit Design(18), Integrated Circuits and Semiconductor Failure Analysis(9), Low-power high-performance VLSI design(5), Semiconductor Quantum Structures and Devices(4)

Publications39 total

RESET Kinetics of 28 nm Integrated ReRAM
2023· 1 cited
Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory
physica status solidi (a)·2023· 18 citedOpen Access
Reliability of 28nm embedded RRAM for consumer and industrial products
2022· 23 cited
Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE Access·2022· 13 citedOpen Access
The instrument control unit of the PLATO payload: design consolidation following the preliminary design review by ESA
Space Telescopes and Instrumentation 2020: Optical, Infrared, and Millimeter Wave·2020· 3 cited
Comprehensive statistical investigation of STT-MRAM thermal stability
2014· 9 cited
A Simple Model Describing the Symmetric <formula formulatype="inline"><tex Notation="TeX">$I\hbox{--}V$</tex></formula> Characteristics of <formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Polycrystalline Si/ <formula formulatype="inline"><tex Notation="TeX">$\hbox{n}$</tex></formula> Monocrystalline Si, and <formula formulatype="inline"> <tex Notation="TeX">$\hbox{n}$</tex></formula> Polycrystalline Si/<formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Monocrystalline Si Junctions
IEEE Journal of Photovoltaics·2014· 98 cited
HCI vs. BTI? - Neither one's out
2012· 34 cited
A method to analyze the impact of fast-recovering NBTI degradation on the stability of large-scale SRAM arrays
Solid-State Electronics·2011· 3 cited
Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells
IEEE Transactions on Electron Devices·2011· 1 cited
Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memories
IEEE Transactions on Electron Devices·2011· 6 cited
Impact of fast-recovering NBTI degradation on stability of large-scale SRAM arrays
2010· 13 cited
Ba 0.7 Sr 0.3 O thin films on n-Si as high-k material: correlation between structural and electrical properties
Verhandlungen der Deutschen Physikalischen Gesellschaft·2010
A voltage scaling model for performance evaluation in digital CMOS circuits
2009· 1 cited
Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation
2009· 7 cited
Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation
2009· 7 cited
A 65 nm test structure for SRAM device variability and NBTI statistics
Solid-State Electronics·2009· 14 cited
Relaxed germanium films on silicon (110)
Thin Solid Films·2008· 12 cited
A 65nm test structure for the analysis of NBTI induced statistical variation in SRAM transistors
2008· 27 cited
An Effective Switching Current Methodology to Predict the Performance of Complex Digital Circuits
2007· 40 cited
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Frequent Co-authors

Tobias Wietler(5), Georg Georgakos(5), E. Bugiel(5), E. Amirante(4), Martin Ostermayr(4), Peter Huber(4), J. Otterstedt(4), D. Schmitt‐Landsiedel(4), Stefan Drapatz(4), Björn Fischer(3), Thomas Fischer(3), Stefan Wiefels(3), Nils Kopperberg(3), Dirk J. Wouters(3), Rainer Waser(3), Stephan Menzel(3), Robby Peibst(2), P. Nguyen(2), G. Paasch(2), K. von Arnim(2)