P. Dobrosz

Manchester Metropolitan University — United Kingdom

Engineering · Physical Sciences

9h-index358citations33works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Advancements in Semiconductor Devices and Circuit Design(23), Integrated Circuits and Semiconductor Failure Analysis(16), Semiconductor materials and devices(14), Silicon and Solar Cell Technologies(9), Nanowire Synthesis and Applications(9)

Publications33 total

Ion sputter-deposition and in-air crystallisation of Cr2AlC films
Vacuum·2013· 42 cited
Strain Determination
2013
The High-Mobility Bended n-Channel Silicon Nanowire Transistor
IEEE Transactions on Electron Devices·2010· 46 citedOpen Access
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
Microelectronic Engineering·2009· 20 citedOpen Access
Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs
2009Open Access
Investigation of oxidation-induced strain in a top-down Si nanowire platform
Microelectronic Engineering·2009· 16 citedOpen Access
Tip enhanced Raman spectroscopy for high resolution assessment of strained silicon devices
JuSER (Forschungszentrum Jülich)·2009
Nanoscale strain characterisation for ultimate CMOS and beyond
Materials Science in Semiconductor Processing·2008· 8 citedOpen Access
Nanometer strain profiling through Si/SiGe quantum layers
Journal of Applied Physics·2008· 7 cited
Strain engineering for high mobility channels
2008
Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2008Open Access
Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers
2008· 1 cited
Nanoscale strain characterisation in patterned SSOI structures
2008· 1 cited
Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers
Journal of Applied Physics·2007· 3 cited
Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs
2007
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
2007· 40 citedOpen Access
Strained silicon technology
2006· 3 cited
Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs
IEEE Transactions on Electron Devices·2006· 19 cited
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
IEEE Transactions on Electron Devices·2006· 78 cited
Thermal Stability of Thin Virtual Substrates for High Performance Devices
MRS Proceedings·2006
page 1 of 2Next →

Frequent Co-authors

A.G. O’Neill(28), Sarah H. Olsen(21), SH Olsen(11), S.J. Bull(9), Enrique Escobedo‐Cousin(9), R. Agaiby(8), SJ Bull(8), Adrian M. Ionescu(7), Sanatan Chattopadhyay(6), S. Bull(6), Kirsten E. Moselund(5), Mohammad Najmzadeh(5), Mikael Östling(5), H. Coulson(5), Luca De Michielis(4), D. Bouvet(4), K. Lyutovich(4), E. Kasper(4), Rmb Agaiby(4), Parker Y. L. Tsang(3)