D. Behr

Physics and Astronomy · Physical Sciences

12h-index693citations22works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(11), Semiconductor Quantum Structures and Devices(10), Semiconductor materials and devices(7), Metal and Thin Film Mechanics(6), ZnO doping and properties(5)

Publications22 total

Zeolites as sustainable alternatives to traditional tanning chemistries
Green Chemistry·2023· 22 citedOpen Access
Group III-nitride based blue emitters
Advances in Solid State Physics·2007· 1 cited
Development of a vertical gradient freeze process for low EPD GaAs substrates
Materials Science and Engineering B·2001· 18 cited
Composition Dependence of the Band Gap Energy of In<sub>x</sub>Ga<sub>1−x</sub>N Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition
MRS Internet Journal of Nitride Semiconductor Research·1999· 6 citedOpen Access
Spectroscopic ellipsometry characterization of (InGa)N on GaN
Applied Physics Letters·1998· 21 cited
Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Applied Physics Letters·1998· 57 cited
Composition Dependence of the Band Gap Energy of In<sub>x</sub>Ga<sub>l-x</sub>N Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition
MRS Proceedings·1998
Electron field emission from thin fine-grained CVD diamond films
Diamond and Related Materials·1997· 80 cited
Lift-off technique of homoepitaxial CVD diamond films by deep implantation and selective etching
Diamond and Related Materials·1997· 10 cited
Epitaxial overgrowth of 13C diamond films on diamond substrates predamaged by ion implantation
Journal of Applied Physics·1997· 2 cited
Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Applied Physics Letters·1997· 74 cited
Resonant Raman Scattering in GaN/Al<sub>0.15</sub> Ga<sub>0.85</sub>N and In<sub>y</sub>Ga<sub>1-y</sub>N/GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N Heterostructures
MRS Proceedings·1997· 12 cited
Resonant Raman scattering in hexagonal GaN
Applied Physics Letters·1996· 62 cited
Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire
MRS Proceedings·1996· 6 cited
Resonant Raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces
Applied Physics Letters·1994· 31 cited
Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular-beam epitaxy
Applied Physics Letters·1994· 12 cited
Nitrogen stabilized 〈100〉 texture in chemical vapor deposited diamond films
Applied Physics Letters·1994· 247 cited
Raman scattering investigation on the ordered incorporation of Si dopant atoms on GaAs(001) vicinal surfaces during MBE growth
Solid-State Electronics·1994· 1 cited
Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs(001) vicinal surfaces
Applied Physics Letters·1994· 15 cited
Raman spectroscopic study of interfaces in InAs/AlSb AND InAs/AlAs/AlSb quantum wells grown by molecular beam epitaxy
Superlattices and Microstructures·1993
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Frequent Co-authors

J. Wagner(17), P. Koidl(8), K. H. Bachem(8), H. Obloh(6), N. Herres(5), A. Ramakrishnan(5), U. Kaufmann(4), M. Kunzer(4), R. Locher(3), R. Niebuhr(3), J.D. Ralston(3), M. Ramsteiner(3), G. Jungk(3), C. Wild(2), J. Schmitz(2), L. Däweritz(2), R. Hey(2), Matthias Maier(2), F. Lacher(1), J. Schneider(1)