J. J. Song

Yale University — United States

Physics and Astronomy · Physical Sciences

24h-index1.6kcitations71works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(35), Semiconductor Quantum Structures and Devices(34), Ga2O3 and related materials(14), Spectroscopy and Quantum Chemical Studies(13), ZnO doping and properties(10)

Publications71 total

Mitochondrial Fission Governed by Drp1 Regulates Exogenous Fatty Acid Usage and Storage in Hela Cells
Metabolites·2021· 35 citedOpen Access
Hierarchical metal–semiconductor–graphene ternary heteronanostructures for plasmon-enhanced wide-range visible-light photocatalysis
Journal of Materials Chemistry A·2019· 35 cited
ITiO Film Fabrication using RF Magnetron Sputtering system
한국조명·전기설비학회 학술대회논문집·2012
Investigation of ITiO Films Properties for various substrate temperature
한국조명·전기설비학회 학술대회논문집·2012
Exceptionally slow rise in differential reflectivity spectra of excitons in GaN: Effect of excitation-induced dephasing
Physical review. B, Condensed matter·2003Open Access
Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition
Journal of Applied Physics·2002· 13 cited
Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">GaN</mml:mi></mml:math>double heterostructure
Physical review. B, Condensed matter·2001· 18 cited
Ultrafast carrier dynamics in a highly excited GaN epilayer
Physical review. B, Condensed matter·2001· 39 cited
Structural and Optical Characteristics of Laterally Overgrown GaN Pyramids on (111) Si Substrate
MRS Proceedings·2001
Optical Properties and Lasing in (In, Al)GaN Structures
physica status solidi (a)·2001· 3 cited
Study of gain mechanisms in AlGaN in the temperature range of 30–300 K
Applied Physics Letters·2000· 2 cited
GaN/AlGaN SCH UV semiconductor lasers: Effect of GaN well thickness on lasing efficiency
2000
Study of gain mechanisms in Al/sub x/Ga/sub 1-x/N in the temperature range of 30 to 300 K
2000
Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures
MRS Internet Journal of Nitride Semiconductor Research·2000Open Access
Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
MRS Internet Journal of Nitride Semiconductor Research·2000· 1 citedOpen Access
Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures
Applied Physics Letters·1999· 27 cited
Room-temperature deep-ultraviolet-stimulated emission from AlxGa1−xN thin films grown on sapphire
Applied Physics Letters·1999· 18 cited
Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
MRS Proceedings·1999
Microstructure-Based Lasing in GaN/AlGaN Separate Confinement Heterostructures
MRS Proceedings·1999
Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells
Applied Physics Letters·1998· 17 cited
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Frequent Co-authors

W. Shan(12), M. D. Levenson(10), B. D. Little(7), H. Morkoç̌(7), C. W. Tu(7), B. Goldenberg(5), A. J. Fischer(5), C. P. Hays(5), Y. S. Yoon(5), P. S. Jung(5), José Jacob(5), J. B. Lam(5), John F. Klem(4), A. Fedotowsky(4), Sung‐Ho Hwang(4), Yia‐Chung Chang(4), Young-Kil Kwon(4), J. H. Lee(3), M. Schurman(3), R. A. Stall(3)