Seong-Ju Park

Gwangju Institute of Science and Technology — South Korea

Engineering · Physical Sciences

29h-index3.0kcitations64works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(27), GaN-based semiconductor devices and materials(20), Nanowire Synthesis and Applications(20), Silicon Nanostructures and Photoluminescence(19), ZnO doping and properties(15)

Publications64 total

Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode
Applied Physics Letters·2014· 18 cited
Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors
Applied Physics Letters·2013· 13 cited
Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors
Nanotechnology·2012· 16 cited
Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices
Applied Physics Letters·2012· 55 cited
Green Emission of Silicon Quantum Dot Light-emitting Diodes caused by Enhanced Carrier Injection
Journal of the Korean Physical Society·2011· 3 cited
Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask
Nanotechnology·2011· 32 cited
Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy
Applied Physics Letters·2010· 11 cited
Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals
Applied Physics Letters·2009· 9 cited
Enhancement of Electrical and Optical Properties of Silicon Quantum Dot Light-Emitting Diodes with ZnO Doping Layer
Japanese Journal of Applied Physics·2009
Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes
Applied Physics Letters·2009· 9 cited
Electrical and optical characteristics of silicon nanocrystal solar cells
Applied Physics Letters·2009· 37 cited
Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate
Applied Physics Letters·2009· 15 cited
The effect of localized surface plasmon on the photocurrent of silicon nanocrystal photodetectors
Applied Physics Letters·2009· 22 cited
Size-dependent photocurrent of photodetectors with silicon nanocrystals
Applied Physics Letters·2009· 28 cited
Carrier Concentration Dependence of the Electrical Behaviors of ITO Contacts on n-Type ZnO
Journal of the Korean Physical Society·2009
Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN
Journal of Materials Science Materials in Electronics·2006· 1 cited
Ni ∕ Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency
Applied Physics Letters·2006· 40 cited
Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films
Applied Physics Letters·2006· 29 cited
Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3
Applied Physics Letters·2006· 243 cited
Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition
Superlattices and Microstructures·2005· 9 cited
page 1 of 4Next →

Frequent Co-authors

Tae‐Yeon Seong(21), Chang‐Hee Cho(11), Baek-Hyun Kim(11), Jeong Sook Ha(8), Kyoung-Kook Kim(7), El-Hang Lee(7), Nae-Man Park(6), Chel‐Jong Choi(5), Ja-Soon Jang(5), In‐Hwan Lee(5), Kang-Ho Park(5), Han‐Ki Kim(4), Sang‐Woo Kim(4), Yong‐Tae Moon(4), Dong-Joon Kim(4), Sang-Kyun Kim(4), Jang‐Won Kang(4), Tae‐Wook Kim(3), Gun Yong Sung(3), June-O Song(3)