J.-D. Ganière

École Polytechnique Fédérale de Lausanne — Switzerland

Physics and Astronomy · Physical Sciences

23h-index1.6kcitations75works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(53), GaN-based semiconductor devices and materials(17), Semiconductor materials and devices(17), Quantum Dots Synthesis And Properties(15), Chalcogenide Semiconductor Thin Films(9)

Publications75 total

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires
Nano Letters·2015· 36 citedOpen Access
High-temperature Mott transition in wide-band-gap semiconductor quantum wells
Physical Review B·2014· 53 citedOpen Access
Quantitative Cathodoluminescence Opens New Areas of Investigation in Semiconductor Research and Production
Microscopy Today·2012Open Access
Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities
Physical Review B·2012· 13 citedOpen Access
Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN
Journal of Applied Physics·2012· 12 citedOpen Access
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
Physical Review B·2011· 27 citedOpen Access
Pyramidal<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>GaAs</mml:mtext><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mtext>Al</mml:mtext></mml:mrow><mml:mi>z</mml:mi></mml:msub><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>z</mml:mi></mml:mrow></mml:msub><mml:mtext>As</mml:mtext></mml:mrow></mml:math>quantum wire/dot systems with controlled heterostructure potential
Physical Review B·2010· 23 citedOpen Access
Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence
Journal of Applied Physics·2010· 32 citedOpen Access
Electron localization by a donor in the vicinity of a basal stacking fault in GaN
Physical Review B·2009· 29 citedOpen Access
Exciton Localization On Basal Stacking Faults In A-Plane GaN Probed By Picosecond Time-Resolved Cathodoluminescence
HAL (Le Centre pour la Communication Scientifique Directe)·2009Open Access
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN
Applied Physics Letters·2009· 49 citedOpen Access
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
Journal of Applied Physics·2009· 74 citedOpen Access
Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates
Journal of Applied Physics·2009· 64 citedOpen Access
Growth mode induced carrier localization in InGaN/GaN quantum wells
The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics·2007· 10 citedOpen Access
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells
Applied Physics Letters·2006· 87 citedOpen Access
Engineering the spatial confinement of exciton polaritons in semiconductors
Physical Review B·2006· 176 citedOpen Access
Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures
Applied Physics B·2006· 19 citedOpen Access
Probing carrier dynamics in nanostructures by picosecond cathodoluminescence
Nature·2005· 175 citedOpen Access
Reflectivity Measurements Of Electron Beam Written First Order Bragg Gratings On AlGaAs Rib Waveguides
2005
Carrier-carrier contribution to intersubband scattering in wide quantum wells
2003
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Frequent Co-authors

B. Deveaud(13), N. Grandjean(9), J.-M. Bonard(9), Pierre Corfdir(8), Pierre Lefèbvre(8), V. Ciulin(6), S. Sonderegger(5), A. Dussaigne(5), P. Kossacki(5), J. J. Paggel(5), Lucia Sorba(5), F. K. Reinhart(5), Brigitte Sieber(5), F. Morier‐Genoud(4), Jacques Levrat(4), Jelena Ristić(4), Stefan Haacke(4), B. Deveaud-Plédran(4), Nguyen Hong Ky(4), D. Martin(4)