D. Gloria

Engineering · Physical Sciences

21h-index1.4kcitations142works1.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(85), Microwave Engineering and Waveguides(41), Advancements in Semiconductor Devices and Circuit Design(33), Electromagnetic Compatibility and Noise Suppression(25), Semiconductor materials and devices(22)

Publications142 total

B55X: A SHIFT in STMicroelectronics BiCMOS Technologies
River Publishers eBooks·2024· 3 citedOpen Access
Total Ionizing Dose in 130-nm and 55-nm SiGe:C Heterojunction Bipolar Transistors
SPIRE - Sciences Po Institutional REpository·2024Open Access
Total Ionizing Dose in 0.13μm and 55nm SiGe : C HBTs
SPIRE - Sciences Po Institutional REpository·2024
Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors
2023· 1 citedOpen Access
Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics
2023· 2 cited
Effects of X-ray and Gamma irradiation on advanced Si/SiGe:C HBTs DC characteristics
SPIRE - Sciences Po Institutional REpository·2023Open Access
0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs R<sub>on</sub>x C<sub>off</sub>Switch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions
2022 International Electron Devices Meeting (IEDM)·2022· 3 cited
[Invited] Challenges to measure RF noise and intermodulation performances of mmW/THz devices
HAL (Le Centre pour la Communication Scientifique Directe)·2022Open Access
Wideband mm-Wave Integrated Passive Tuners for Accurate Characterization of (Bi)CMOS Technologies
2022
220 GHz E-Plane Transition from Waveguide to Suspended Stripline Integrated on Industrial Organic Laminate Substrate Technology
2021 51st European Microwave Conference (EuMC)·2022· 4 citedOpen Access
Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology
IEEE Transactions on Microwave Theory and Techniques·2021· 6 cited
SOI CMOS and SiGe BiCMOS Technologies for RF and mmW Applications
2021· 2 cited
Design of zero bias power detectors towards power consumption optimization in 5G devices
Microelectronics Journal·2021· 4 citedOpen Access
Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing
2020Open Access
CRISE DO JUDICIÁRIO: O ACESSO À JUSTIÇA GARANTIDO PELOS MÉTODOS ADEQUADOS DE SOLUÇÃO DE CONFLITOS
Revista Meritum·2020· 1 citedOpen Access
Power Measurement Setup Development for On-Wafer Characterization at 185–191 GHz
2020· 2 cited
Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology
IEEE Transactions on Microwave Theory and Techniques·2020· 35 cited
Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors
HAL (Le Centre pour la Communication Scientifique Directe)·2019· 1 cited
Silicon Based Diode Noise Source Scaling For Noise Measurement Up To 325 GHz
2019· 4 cited
Low frequency noise characterization and modeling of SiGe HBT featuring LASER annealing in a 55-nm CMOS node
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2019Open Access
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Frequent Co-authors

F. Danneville(20), G. Dambrine(13), P. Chevalier(10), Sylvie Lépilliet(10), F. Gianesello(8), Thomas Quémerais(7), S. Boret(7), S. Montusclat(7), C. Raynaud(7), A. Chantre(6), Christophe Gaquière(6), Guillaume Ducournau(6), Romain Pilard(6), Frédéric Gianesello(6), G. Avenier(5), João Carlos Azevedo Gonçalves(5), Cyril Luxey(5), Simon Bouvot(5), Aimeric Bisognin(5), D. Céli(4)