Chuan-Chou Hwang

Ming Chi University of Technology — Taiwan

Engineering · Physical Sciences

6h-index125citations14works0.02yr avg
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Research Topics

Semiconductor materials and devices(7), ZnO doping and properties(5), Ga2O3 and related materials(5), Thin-Film Transistor Technologies(4), Ferroelectric and Piezoelectric Materials(3)

Publications14 total

Printed wideband antenna for LTE (long term evolution) application
2014· 1 cited
pH‐Sensing Characteristics of Hydrothermal Al‐Doped ZnO Nanostructures
Journal of Nanomaterials·2013· 43 citedOpen Access
A novel density control of carbon nanotubes by partial oxidation of catalyst metal and its field emission enhancement
2013
The effects of oxygen annealing on the electrical characteristics of hydrothermally grown zinc oxide thin-film transistors
Solid-State Electronics·2012· 11 cited
Field-Emission Stability of Hydrothermally Synthesized Aluminum-Doped Zinc Oxide Nanostructures
Journal of Nanoscience and Nanotechnology·2012· 2 cited
Zinc oxide thin-film transistors fabricated via low-temperature hydrothermal method
Surface and Coatings Technology·2012· 5 cited
Oxygen annealing effect on field-emission characteristics of hydrothermally synthesized Al-doped ZnO nanowires
Surface and Coatings Technology·2012· 21 cited
Annealing effect on hydrothermally grown ZnO thin-film transistors
2011
A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors
Journal of Semiconductors·2010
Characteristics of low-temperature-prepared (Ba,Sr)TiO/sub 3/ films post treated by novel excimer laser annealing
2003
The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO<sub>3</sub>Thin Films at Low Substrate Temperatures
Japanese Journal of Applied Physics·2003· 11 cited
Low Temperature Radio-Frequency-Sputtered (Ba, Sr)TiO[sub 3] Films on Pt/TiN/Ti/Si Substrates with Various Oxygen/Argon Mixing Ratios
Journal of The Electrochemical Society·2003· 23 cited
EÄect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature
2001
Suppression of boron penetration for p/sup +/ stacked poly-Si gates by using inductively coupled N<sub>2</sub> plasma treatment
IEEE Electron Device Letters·1999· 8 cited

Frequent Co-authors

Jyh-Liang Wang(8), Tsang-Yen Hsieh(7), Der-Chi Shye(7), Po‐Yu Yang(5), Miin‐Horng Juang(5), Huang‐Chung Cheng(5), Jyh-Shin Chen(4), Sien Chi(3), I-Che Lee(3), Ming-Jiunn Lai(2), Chuan-Ping Juan(2), Cheng-Chung Jiang(1), Ming-Hwu Cheng(1), Cheng‐Chung Jaing(1), Hsien‐Wen Hsu(1), Wen-Koi Lai(1), Shu-Ching Chu(1), Tzeng‐Feng Liu(1), Po‐Yu Yang(1), Jian-You Lu(1)