Yong Dae Choi

Physics and Astronomy · Physical Sciences

10h-index510citations30works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(19), Quantum Dots Synthesis And Properties(17), Chalcogenide Semiconductor Thin Films(17), Advanced Semiconductor Detectors and Materials(6), GaN-based semiconductor devices and materials(5)

Publications30 total

타원 편광 분석법에 의한 Al$_{0.21}$Ga$_{0.79}$N 박막의 결정구조와 광학적 특성
2017
포인팅벡터로 구현한 편광진행파의 MATHEMATICA 플랫폼
2013
ZnTe 단결정 박막의 결정구조와 광학적 특성 연구
2012
Study on Attribute of the Time and Change of the Qi of Meridians(經氣) according to the Cycle
한의학연구소 논문집·2010
Epitaxial Growth of Hexagonal CdS on GaAs (111) Substrates
Journal of the Korean Physical Society·2008· 1 cited
Influences of particle size upon room temperature structure of BaTiO3 thin films on p-Si substrates
Journal of Materials Science Materials in Electronics·2007· 1 cited
Photoluminescence characterization of cubic CdS epilayers
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2006· 8 citedOpen Access
Evaluation of crystal structure and photoluminescence for ZnTe epilayers grown on a 2<sup>o</sup> off‐oriented GaAs (100) substrate
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2006· 3 cited
Strain effect in ZnTe/Zn1-xMnxTe single quantum wells
Journal of the Korean Physical Society·2005· 1 cited
Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates
MRS Proceedings·2005· 1 cited
Compositional dependence of the Raman frequencies and line shapes of ZnS1−xTex alloys
Journal of Applied Physics·2004· 8 cited
Growth and characterization of cubic CdS epilayers on GaAs substrates
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2004· 11 cited
Effects of synthesis temperature on particle size/shape and photoluminescence characteristics of ZnS:Cu nanocrystals
Materials Letters·2003· 178 cited
Effect of Mn concentration on photoluminescence characteristics of Zn1–xMnxTe epilayers
Thin Solid Films·2003· 13 cited
Role of growth parameters on structural and optical properties of ZnS nanocluster thin films grown by solution growth technique
Materials Chemistry and Physics·2002· 65 cited
Resonant Raman scattering in ZnS epilayers
Materials Chemistry and Physics·2002· 24 cited
Band gap energy and exciton peak of cubic CdS/GaAs epilayers
Journal of Applied Physics·2002· 30 cited
Resonant Raman scattering measurements of strains in ZnS epilayers grown on GaP
Journal of Applied Physics·2002· 28 cited
Variation of band gap energy and photoluminescence characteristics with Te composition of ZnS1−xTex epilayers grown by hot-wall epitaxy
Applied Surface Science·2001· 7 cited
Photoluminescence characteristics of ZnTe epilayers
Journal of Applied Physics·2001· 60 cited
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Frequent Co-authors

Young‐Moon Yu(17), O Byungsung(17), Ki-Seon Lee(13), Sungun Nam(11), Jongwon Lee(5), P. Y. Yu(5), Jongkwang Rhee(5), M.‐Y. Yoon(4), Changsoo Kim(3), Sangwook Lee(2), Seontai Kim(2), Yang-June Jung(2), Daejung Kim(2), Daegwon Song(1), Dong-Jin Kim(1), In Yong Park(1), Sungryoung Cho(1), In Yong Park(1), Kwan-mo Kim(1), Myung Ho Hyun(1)