F. Arnaud d’Avitaya

Belarusian State University of Informatics and Radioelectronics — BY

Physics and Astronomy · Physical Sciences

26h-index2.3kcitations143works0.02yr avg
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Research Topics

Semiconductor materials and interfaces(67), Semiconductor materials and devices(53), Silicon Nanostructures and Photoluminescence(44), Surface and Thin Film Phenomena(39), Nanowire Synthesis and Applications(19)

Publications143 total

Formation and properties of porous silicon/titania nanostructures
Inorganic Materials·2014· 2 cited
Effect of the electrolyte temperature on the formation and structure of porous anodic titania film
Thin Solid Films·2012· 27 cited
<i>Ab initio</i>modeling of the structural, electronic, and optical properties of A<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mrow/><mml:mi>II</mml:mi></mml:msup></mml:math>B<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mrow/><mml:mi>IV</mml:mi></mml:msup></mml:math>C<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msubsup><mml:mrow/><mml:mn>2</mml:mn><mml:mi mathvariant="normal">V</mml:mi></mml:msubsup></mml:math>semiconductors
Physical Review B·2012· 142 cited
Ab initio modeling of the structural, electronic and optical properties of AIIBIVCV2 semiconductors
HAL (Le Centre pour la Communication Scientifique Directe)·2012
Different architectures of relaxed Si1−xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics
Journal of Crystal Growth·2011· 10 cited
Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation
Thin Solid Films·2011· 12 cited
NANOPOROUS TITANIA ELECTROCHEMICALLY FORMED AT LOW TEMPERATURES
2011· 1 cited
PROPERTIES OF NOVEL CHALCOPYRITE SEMICONDUCTORS FOR OPTOELECTRONICS
2011· 1 cited
AII-BIV-CV2 ternary semiconductors for photovoltaics
HAL (Le Centre pour la Communication Scientifique Directe)·2011
Structural and electrical characterizations of nanometer scaled aluminum oxide in metal / insulator / silicon (100) heterostructures
HAL (Le Centre pour la Communication Scientifique Directe)·2011· 2 cited
Effects of Morphology on Stability, Electronic, and Optical Properties of Rutile TiO<sub>2</sub> Nanowires
The Journal of Physical Chemistry C·2010· 21 cited
Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system
Thin Solid Films·2010· 14 citedOpen Access
Effects of Morphology on Stability, Electronic, and Optical Properties of Rutile TiO2 Nanowires
HAL (Le Centre pour la Communication Scientifique Directe)·2010· 1 cited
CURRENT-VOLTAGE CHARACTERISTICS AND TUNNEL MAGNETORESISTANCE OF <font>CoFe</font>/<font>MgO</font>/<font>Si</font> NANOSTRUCTURES
Physics, Chemistry and Application of Nanostructures·2009
MAGNETIC PROPERTIES OF <font>BeGeAs</font><sub>2</sub> DOPED WITH 3d-ELEMENTS
Physics, Chemistry and Application of Nanostructures·2009
Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds
HAL (Le Centre pour la Communication Scientifique Directe)·2009· 1 cited
A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices
Journal of Physics Conference Series·2008· 5 citedOpen Access
Spin-dependent transport of electrons through ferromagnetic/insulator/semiconductor nanostructures
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 2 cited
AN EFFECT OF ELECTRON SCATTERING WITH SPIN CONSERVATION ON TUNNELING MAGNETORESISTANCE
Physics, Chemistry and Application of Nanostructures·2007
THE EFFECT OF IMPURITY ON MAGNETIC PROPERTIES OF <font>ZnGeP</font><sub>2</sub> AND <font>ZnGeAs</font><sub>2</sub>
Physics, Chemistry and Application of Nanostructures·2007
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Frequent Co-authors

E. Rosencher(12), F. Bassani(11), P. A. Badoz(9), J. Derrien(9), В. Е. Борисенко(7), J. A. Chroboczek(7), J.‐L. Lazzari(6), Y. Campidelli(6), S.L. Delage(5), J. Y. Duboz(5), A. Pério(4), J. C. Pfister(4), C. d’Anterroches(4), Louis Vervoort(4), В. Л. Шапошников(3), G. Vincent(3), I. Mihalcescu(3), Jean‐Claude Vial(3), А. Б. Филонов(3), Stefano Ossicini(3)